| PART |
Description |
Maker |
| SI3471DV |
P-Channel 12-V (D-S) MOSFET
P-CHANNL 12-V (D-S) MOSFET
|
VISAY[Vishay Siliconix]
|
| 2SK947 2SK947-MR |
N-CHANNLEL SILICON POWER MOSFET 12 A, 250 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNLEL SILICON POWER MOSFET - CHANNLEL硅功率MOSFET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| C3M0065100K |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
|
Wolfspeed
|
| C3M0075120K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| MCH5837 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| VEC2819 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2811 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| C2M0080120D |
Silicon Carbide Power MOSFET Z-FETTM MOSFET
|
Cree, Inc
|
| UP04979 |
Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| BF2040R BF2040W BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BR1000 BR1010 BR1001 BR1002 BR1004 BR1006 BR1008 |
SILICON BRIDGE RECTIFIERS 硅桥式整流器
MOSFET P-CH 500V 8A TO-247AD
MOSFET P-CH 600V 10A TO-247AD
MOSFET P-CH 500V 7A TO-247AD
MOSFET P-CH 500V 11A TO-247AD
MOSFET N-CH 600V 20A TO-247AD
|
EIC discrete Semiconduc...
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| BF1005SR BF1005SW BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
