| PART |
Description |
Maker |
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
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http://
SIEMENS AG
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| Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
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http://
SIEMENS A G
SIEMENS AG
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| AM28F512-120EC AM28F512-120ECB AM28F512-120EE AM28 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
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AMD[Advanced Micro Devices]
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| AM28F512A AM28F512A-90PIB AM28F512A-120EC AM28F512 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
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AMD[Advanced Micro Devices]
|
| IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
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Integrated Device Technology
IDT
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| FM93C06E FM93C06 FM93C06V FM93C06L FM93C06LZ FM93C |
256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
From old datasheet system
256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS)
256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
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Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| AM27C64 AM27C64-120 AM27C64-120DC AM27C64-120DCB A |
64 Kilobit (8 K x 8-Bit) CMOS EPROM
Octal D-Type Flip-Flops With Clock Enable 20-SOIC 0 to 70
Octal D-Type Flip-Flops With Clock Enable 20-SO 0 to 70
Cable Ties; Pack Quantity:100;
Dual 4-Bit Decade Counters 16-PDIP 0 to 70
Dual 4-Bit Decade Counters 16-SOIC 0 to 70
Dual 4-Bit Binary Counters 14-SOIC 0 to 70
Dual 4-Bit Binary Counters 14-SO 0 to 70
Dual 4-Bit Binary Counters 14-PDIP 0 to 70
Quad 2-input positive-NAND buffers with open collector outputs 14-SOIC 0 to 70
Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70
Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70
Octal D-Type Flip-Flops With Clock Enable 20-PDIP 0 to 70 8K X 8 UVPROM, 150 ns, CDIP28
Hex D-Type Flip-Flops with Clock Enable 16-PDIP 0 to 70 8K X 8 UVPROM, 200 ns, CDIP28
Hex D-Type Flip-Flops with Clock Enable 16-SOIC 0 to 70 8K X 8 UVPROM, 200 ns, CDIP28
Quadruple 2-Input Multiplexers With Storage 16-SOIC 0 to 70 8K X 8 UVPROM, 90 ns, CDIP28
64 Kilobit (8 K x 8-Bit) CMOS EPROM 64千比特（8亩8位）CMOS存储
64 Kilobit (8 K x 8-Bit) CMOS EPROM 64千比特（8亩8位）的CMOS存储
Hex D-Type Flip-Flops with Clock Enable 16-SO 0 to 70 8K X 8 OTPROM, 200 ns, PQCC32
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AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
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| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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AMD[Advanced Micro Devices]
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| AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
Connector 连接
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
256K X 8 FLASH 3V PROM, 90 ns, PDSO40
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AMD
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| AM42DL3244GB25IT AM42DL3234GB25IT AM42DL3224GB25IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
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Advanced Micro Devices, Inc.
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| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
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Advanced Micro Devices, Inc.
|
| PCF85103C-2P/0011 |
256 x 8-bit CMOS EEPROM with I2C-bus interface; Package: SOT97-1 (DIP8); Container: Tube 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
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NXP Semiconductors N.V.
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