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2N4401

2N4401 DataSheet Weitron Technology NPN SiliconGeneral Purpose Transistors

SiliconGeneral Purpose Transistors

Weitron Technology

304.873 Kb

3 Pages

Maker Site:
http://www.weitron.com.tw/

Weitron Technology

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---Full Text Search Engine--- 2N4401 Weitron Technology
---Full Text Search Engine--- SiliconGeneral Purpose Transistors

2N4401

2N4401
NPN Silicon General Purpose Transistors
TO-92
FEATURES Power dissipation PCM : 0.625 W Tmb=25ae(c) a Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J T stg: -55ae to +150ae
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
unless
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 VCE(sat) VBE(sat)
otherwise
Test
specified(c)
MIN 60 40 6 0.1 0.1 0.1 100 300 0.4 0.95 V V MAX UNIT V V V |I A |I A |I A
conditions
Ic=100|I , IE=0 A IC= 1mA , IE=100|I A, IB=0 IC=0
VCB=50 V , IE=0 VCE=35 V , IB=0 VEB=5V , IC=0
VCE=1 V, IC= 150m A IC=150 mA, IB=15m A IC= 150 mA, IB=15m A VCE= 10V, IC= 20mA
Transition frequency
f
T
250
MHz
f = 100MHz
WEITRON
http://www.weitron.com.tw
2N4401
WEITRON
http://www.weitron.com.tw
2N4401
TO-92 Outline Dimensions
E
unit:mm
C
J K
G
Dim A B C D E G H J K L
H
TO-92
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
B
L
WEITRON
http://www.weitron.com.tw
D
A