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IPP028N08N3G

IPP028N08N3G DataSheet Infineon Technologies AG OptiMOSÂ®3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

OptiMOSÂ®3 Power-Transistor Features Excellent gate charge DS(on) product

Infineon Technologies

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Maker Site:
http://www.infineon.com/

Infineon Technologies AG

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---Full Text Search Engine--- IPP028N08N3G Infineon Technologies
---Full Text Search Engine--- OptiMOSÂ®3 Power-Transistor Features Excellent gate charge DS(on) product

IPP028N08N3G IPI028N08N3G

IPP028N08N3 G IPI028N08N3 G
OptiMOS(R)3 Power-Transistor
Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max ID 80 2.8 100 previous engineering sample codes: IPP02CN08N V m A
* Ideal for high-frequency switching and synchronous rectification Type IPP028N08N3 G IPI028N08N3 G
Package Marking
PG-TO220-3 028N08N
PG-TO262-3 028N08N
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=100 A, R GS=25  Value 100 100 400 1430 20 300 -55 . 175 55/175/56 mJ V W C Unit A
Rev. 1.0
page 1
2008-01-25
IPP028N08N3 G IPI028N08N3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 0.5 62 40 K/W
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=270 A V DS=80 V, V GS=0 V, T j=25 C V DS=80 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A V GS=6 V, I D=50 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 80 2 2.8 0.1 3.5 1 A V
94
10 1 2.4 2.8 2.7 187
100 100 2.8 4.2  S nA m
1)
J-STD20 and JESD22 See figure 3
2) 3)
2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 2
2008-01-25
IPP028N08N3 G IPI028N08N3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
4)
C iss C oss C rss t d(on) tr t d(off) tf V DD=40 V, V GS=10 V, I D=100 A, R G=1.6  V GS=0 V, V DS=40 V, f =1 MHz
-
10700 2890 100 28 73 86 33
14200 pF 3840 150 ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=40 V, V GS=0 V V DD=40 V, I D=100 A, V GS=0 to 10 V
-
50 30 50 155 4.7 210
67 45 72 206 279
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s
-
1.0 113 317
100 400 1.2 -
A
V ns nC
See figure 16 for gate charge parameter definition
Rev. 1.0
page 3
2008-01-25
IPP028N08N3 G IPI028N08N3 G
1 Power dissipation P tot=f(T C)
2 Drain current I D=f(T C); V GS10 V
350
120
300
100
250 80
P tot [W]
200
I D [A]
150 100 50 0 0 50 100 150 200
60
40
20
0 0 50 100 150 200
T C [C]
T C [C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
103
limited by on-state resistance 1 s 10 s 100 s
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
0.5
102
1 ms
Z thJC [K/W]
I D [A]
10 ms DC
10-1
0.2
0.1
10
1
0.05 0.02 0.01 single pulse
10
0
10 100 101 102
-2
10-1
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.0
page 4
2008-01-25
IPP028N08N3 G IPI028N08N3 G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
400
10 V 6V 7V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
15
350
12 300
5.5 V
4.5 V
5V
200
R DS(on) [m]
5V
250
9
I D [A]
150
6
100 3 50
4.5 V 10 V
5.5 V 7V 6V
0 0 1 2 3 4 5
0 0 50 100 150 200
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
300
8 Typ. forward transconductance g fs=f(I D); T j=25 C
250
250 200
200 150 150
g fs [S]
100
25 C 175 C
I D [A]
100
50
50
0 0 2 4 6 8
0 0 50 100 150
V GS [V]
I D [A]
Rev. 1.0
page 5
2008-01-25
IPP028N08N3 G IPI028N08N3 G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V
10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
6
4
5
3.5
3 4
2700 A
R DS(on) [m]
2.5
98 %
270 A
3
typ
V GS(th) [V]
100 140 180
2
2
1.5
1 1 0.5 0 -60 -20 20 60
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
105
103
Ciss
104
Coss
102
175 C
175 C, 98% 25 C
C [pF]
103
I F [A]
25 C, 98% Crss
101
102
101 0 20 40 60 80
100 0 0.5 1 1.5 2
V DS [V]
V SD [V]
Rev. 1.0
page 6
2008-01-25
IPP028N08N3 G IPI028N08N3 G
13 Avalanche characteristics I AS=f(t AV); R GS=25  parameter: T j(start)
1000
14 Typ. gate charge V GS=f(Q gate); I D=50 A pulsed parameter: V DD
12
40 V
10
20 V
100
25 C
8
60 V
I AV [A]
150 C
100 C
V GS [V]
1000
6
10
4
2
1 0.1 1 10 100
0 0 50 100 150 200
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
90
V GS
Qg
80
V BR(DSS) [V]
V g s(th)
70
Q g(th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q g ate
60
T j [C]
Rev. 1.0
page 7
2008-01-25
IPP028N08N3 G IPI028N08N3 G
PG-TO262-3 (I-Pak)
Rev. 1.0
page 8
2008-01-25
IPP028N08N3 G IPI028N08N3 G
PG-TO220-3
Rev. 1.0
page 9
2008-01-25
IPP028N08N3 G IPI028N08N3 G
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 10
2008-01-25