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MRF1946A

MRF1946A DataSheet Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR

SILICON POWER TRANSISTOR

Advanced Semiconductor

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1 Pages

Maker Site:
http://www.advancedsemiconductor.com/

Advanced Semiconductor

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---Full Text Search Engine--- MRF1946A Advanced Semiconductor
---Full Text Search Engine--- SILICON POWER TRANSISTOR

MRF1946A

MRF1946A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications.
PACKAGE STYLE .380" 4L STUD
.112x45 A
FEATURES INCLUDE:
* High Common Emitter Power Gain * Output Power = 30 W
B
C E
OC
E B
H I J
MAXIMUM RATINGS
IC VCE VCB PDISS TJ TSTG JC 8.0 A 16 V 36 V 100 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.75 C/W
DIM A B C D E F G H I J
D
#8-32 UNC-2A F E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO ICES hFE Cob GPE   IC = 25 mA IC = 25 mA IE = 5.0 mA VCE = 15 V
TC = 25 C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 16 4.0 5.0
UNITS
V V V mA --pF DB %
VCE = 5.0 V VCB = 15 V VCC = 12.5 V VCC = 15.5 V
IC = 1.0 A f = 1.0 MHz Pout = 30 W f = 175 MHz
40
75 75
150 100
10 60
11 70 No Degradation in Power Output
PIN = 2.0 dB Overdrive
Load VSWR = 30:1 ALL PHASE ANGLES
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1