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SIA429DJT

SIA429DJT DataSheet Vishay Siliconix P-Channel 20 V (D-S) MOSFET

P-Channel MOSFET

Vishay Siliconix

96.984 Kb

7 Pages

Maker Site:
http://www.vishay.com

Vishay Siliconix

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---Full Text Search Engine--- SIA429DJT Vishay Siliconix
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SIA429DJT

New Product
SiA429DJT
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () 0.0205 at VGS = - 4.5 V - 20 0.027 at VGS = - 2.5 V 0.036 at VGS = - 1.8 V 0.060 at VGS = - 1.5 V ID (A) - 12a - 12a - 12a -4 24.5 nC Qg (Typ.)
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * New Thermally Enhanced PowerPAK(R) SC-70 Package - Small Footprint Area - Ultra-Thin 0.6 mm height - Low On-Resistance * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Thin PowerPAK SC-70-6L-Single
0. m 6m
* Load Switch and Charger Switch for Portable Devices * DC/DC Converter
S
D1 6D D2 5D G3 4S S
Marking Code
G BPX Part # code XXX Lot traceability and Date code D Ordering Information: SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS Limit - 20 8 - 12a - 10.6b, c - 8.5b, c - 30 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 12a Unit V
Continuous Drain Current (TJ = 150 C) Pulsed Drain Current (t = 300 s) Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit RthJA t5s 28 36 Maximum Junction-to-Ambientb, f C/W RthJC 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 67038 S10-2538-Rev. A, 08-Nov-10 www.vishay.com 1
m 2.05 m
2.05 m
m
A
PD TJ, Tstg
W
C
New Product
SiA429DJT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS =  8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 6 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 2 A VGS = - 1.8 V, ID = - 2 A VGS = - 1.5 V, ID = - 1 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 8.5 A, dI/dt = 100 A/s, TJ = 25 C IS = - 8.5 A, VGS = 0 V - 0.8 35 18 13 22 TC = 25 C - 12 - 30 - 1.2 60 30 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = 1.2  ID  - 8.5 A, VGEN = - 8 V, Rg = 1  VDD = - 10 V, RL = 1.2  ID  - 8.5 A, VGEN = - 4.5 V, Rg = 1  f = 1 MHz 1.3 VDS = - 10 V, VGS = - 8 V, ID = - 10 A VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A VDS = - 10 V, VGS = 0 V, f = 1 MHz 1750 270 240 41 24.5 2.4 6.7 6.3 22 25 70 25 10 10 80 25 13 35 40 105 40 15 15 120 40 ns  62 37 nC pF
a
Symbol
Test Conditions
Min. - 20
Typ.
Max.
Unit V
- 12 2.7 - 0.4 - 1.0  100 -1 - 10 - 20 0.0170 0.022 0.029 0.038 30 0.0205 0.027 0.036 0.060
mV/C V nA A A

gfs
VDS = - 10 V, ID = - 6 A
S
Notes: a. Pulse test; pulse width  300 s, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 67038 S10-2538-Rev. A, 08-Nov-10
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
30 V GS = 5 V thru 2 V 25
ID - Drain Current (A) ID - Drain Current (A)
20
16
20
12
15 V GS = 1.5 V
8 T C = 25 C
10
5 V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
4 T C = 125 C T C = - 55 C 0 0.0 0.4 0.8 1.2 1.6 2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.08 V GS = 1.5 V 0.07
RDS(on) - On-Resistance ()
Transfer Characteristics
3500 3000
C - Capacitance (pF)
V GS = 1.8 V 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 25 30
ID - Drain Current (A)
2500 2000 1500 1000 Coss 500 Crss 0 0 5 10 15 20 Ciss
V GS = 2.5 V
V GS = 4.5 V
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8 ID = 10 A
VGS - Gate-to-Source Voltage (V)
Capacitance
1.65
V DS = 5 V 1.45 V DS = 10 V V DS = 16 V
RDS(on) - On-Resistance
6
V GS = 4.5 V; 2.5 V; I D = 6 A
(Normalized)
1.25
4
1.05
V GS = 1.8 V; I D = 6 A V GS = 1.5 V; I D = 1 A
2
0.85
0 0 10 20 30 40 50
0.65 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67038 S10-2538-Rev. A, 08-Nov-10
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New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
100 0.06
IS - Source Current (A)
T J = 150 C 10
RDS(on) - On-Resistance ()
0.05 ID = 1 A; T J = 125 C 0.04 ID = 6 A; T J = 125 C 0.03 ID = 6 A; T J = 25 C 0.02 ID = 1 A; T J = 25 C
T J = 25 C 1
0.1 0.0
0.01 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
0.8
30
On-Resistance vs. Gate-to-Source Voltage
0.7
25
0.6
Power (W) VGS(th) (V)
20
ID = 250 A 0.5
15
0.4
10
0.3
5
0.2 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1
1 Time (s)
10
100
1000
TJ - Temperature (C)
Threshold Voltage
100 Limited by RDS(on) *
Single Pulse Power, Junction-to-Ambient
10
ID - Drain Current (A)
100 s 1 ms
1
10 ms 100 ms 1 s, 10 s
0.1 TA = 25 C Single Pulse 0.01 0.1 BVDSS Limited
DC
1
10
100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 67038 S10-2538-Rev. A, 08-Nov-10
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
30
20
25
Power Dissipation (W) 15 ID - Drain Current (A)
20
15
Package Limited
10
10
5
5
0 0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC - Case Temperature (C)
TC - Case Temperature (C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 67038 S10-2538-Rev. A, 08-Nov-10
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New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2
0.1
0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80 C/W
t1 t2
Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2
0.1
0.05 0.02 Single Pulse 10-3 Square Wave Pulse Duration (s) 10-2 10-1
0.1 10-4
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67038.
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Document Number: 67038 S10-2538-Rev. A, 08-Nov-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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