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Advanced Power Electronics
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| Part No. |
AP09N70I-A-HF
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| OCR Text |
... simple drive requirement i d 9a rohs compliant description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous dr... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
122.63K /
4 Page |
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it Online |
Download Datasheet
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Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
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| Part No. |
IRFR/U9120N IRFR9120NTRR
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| OCR Text |
...CC -1.6 v t j = 25c, i s = -3.9a, v gs = 0v ? t rr reverse recovery time CCC 100 150 ns t j = 25c, i f = -4.0a q rr reverse recovery charge CCC 420 630 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligi... |
| Description |
HEXFET Power MOSFET
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| File Size |
3,878.25K /
10 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4700
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| OCR Text |
...atures v ds (v) = 30v i d = 6.9a (v gs = 10v) r ds(on) < 28m ? (v gs = 10v) r ds(on) < 42m ? (v gs = 4.5v) schottky v ds (v) = 30v, i f = 4a, v f <0.5v@3a the ao4700 uses advanced trench technology to provide excellent r ds(on... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
334.30K /
5 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
KRF7338
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| OCR Text |
...*1 0.060 v gs = -4.5v, i d = -2.9a*1 0.150 v gs = -2.7v, i d = -1.5a*1 0.200 v ds =v gs ,i d = 250 a n-ch 0.6 1.5 v ds =v gs ,i d = -250 a p-ch -0.40 -1.0 v ds =6v, i d = 6.0a*1 n-ch 9.2 v ds = -6.0v, i d = -1.5a*1 p-ch 3.5 v ds =9.6v,v gs ... |
| Description |
Ultra Low On-Resistance Dual N and P Channel MOSFET Available in Tape & Reel
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| File Size |
998.56K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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