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  0.0048 Datasheet PDF File

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    Matsshita / Panasonic
Part No. 2SD1821A 2SD1821 0323
OCR Text ... s Features q q q 2.10.1 0.425 1.250.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine...
Description Transistor
From old datasheet system

File Size 45.61K  /  3 Page

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    panasonic
Part No. 2SD1821 2SD1821A
OCR Text 0.425) For high breakdown voltage low-frequency and low-noise amplification s Features * High collector to emitter voltage VCEO * Low noise voltage NV * S-Mini type package, allowing downsizing of the equipment and automatic insertion t...
Description From old datasheet system

File Size 51.53K  /  3 Page

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    2SD1823

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1823
OCR Text ...s Features q q q q q 2.10.1 0.425 1.250.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. S-Mini type package, allowing down...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 35.51K  /  2 Page

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    Matsshita / Panasonic
Part No. 2SD1964 0664
OCR Text 0.70.1 s Features q q q q 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 4.20.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack p...
Description Power Transistors
From old datasheet system

File Size 51.06K  /  4 Page

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    hitachi
Part No. 2SD1970
OCR Text ...Max 32 33 -- 1 5 30000 -- 1.5 2.0 2.0 -- V V V Unit V V V A A Test conditions I C = 1 mA, IE = 0 I C = 1 A, L = 20 mH, RBE = I E = 5 mA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = VCE = 2 V, IC = 0.5 A*1 VCE = 2 V, IC = 2 A*1 I C = 2 A, ...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 32.02K  /  5 Page

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    Matsshita / Panasonic
Part No. 2SD1992A 0317 2SD1992AR 2SD1992AQ
OCR Text ... the radial taping 6.90.1 0.15 0.7 4.0 1.05 2.50.1 (1.45) 0.05 0.8 0.65 max. 1.0 0.45-0.05 +0.1 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to b...
Description TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SC-71
From old datasheet system
Transistors

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    panasonic
Part No. 2SD1992A
OCR Text ...mentary to 2SB1321A Unit: mm (0.7) 6.90.1 (4.0) (1.0) 3.50.1 2.50.1 (0.8) (0.8) s Features q q 0.65 max. (0.85) 14.50.5 Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Abs...
Description From old datasheet system

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    2SD2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2064
OCR Text ...to +150 Unit V V V A A W C C 0.7 s Features 15.00.3 11.00.2 5.00.2 3.2 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collecto...
Description Silicon NPN triple diffusion planar type(For high power amplification)

File Size 49.88K  /  3 Page

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    Matsshita / Panasonic
Part No. 2SD2216L
OCR Text ...tape packing 4 1.000.05 1 0.600.05 0.050.03 0.800.05 For general amplification Complementary to 2SB1462L 0.0350.005 3 2 0.300.03 0.200.03 4 1 0.50 I Absolute Maximum Ratings Ta = 25C Parameter Collector to bas...
Description Transistors
From old datasheet system

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    Panasonic Industrial Solutions
Matsshita / Panasonic
Part No. 2SD2240A 2SD2240 0287 2SD2240/2SD2240A 2SD2240R
OCR Text ...nit: mm s Features q q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the t...
Description TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-75 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 50mA的一(c)| SC - 75
From old datasheet system
2SD2240. 2SD2240A - NPN Transistor

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