| |
|
 |
IXYS[IXYS Corporation]
|
| Part No. |
IXGH10N100U1 IXGH10N100AU1
|
| OCR Text |
...5 20 A 20 A
VCE(sat) 3.5 V 4.0 V
Combi Packs
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Md Weight...017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH 10N100U1 IXGH ... |
| Description |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode
|
| File Size |
118.44K /
6 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
FLL810IQ-4C
|
| OCR Text |
...S = 220mA IGS = -2.2mA
Min. -0.1 -5 48.0
Limits Typ. Max. 8 -0.3 49.0 9.5 45 11.5 0.8 -0.5 15.0 1.1
Unit A V V dBm dB % A C/W
VD...017 .017 .016 .016 .017 .017 .019 .021 .024 .031 .036 .034 .031 .024 .022 .019 .019 .017 .018 .018 .... |
| Description |
L-Band High Power GaAs FET
|
| File Size |
129.42K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA76432S3S HUFA76432P3 HUFA76432S3ST
|
| OCR Text |
0.019 Ohm, N-Channel, Logic Level UltraFET(R) Power MOSFETs Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE)
JEDEC...017, VGS = 10V - rDS(ON) = 0.019, VGS = 5V * Simulation Models - Temperature Compensated PSPICE(R) a... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 55A条（丁）|63AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
| File Size |
213.72K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA76437S3S HUFA76437P3 HUFA76437S3ST
|
| OCR Text |
0.017 Ohm, N-Channel, Logic Level UltraFET(R) Power MOSFETs Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN (FLANGE)
Features
* Ultra Low On-Resistance - rDS(ON) = 0.014, VGS = 10V - rDS(... |
| Description |
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
| File Size |
212.71K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHMS597064 IRHMS593064
|
| OCR Text |
...MS593064 300K Rads (Si) RDS(on) 0.017 0.017 ID -45A* -45A*
IRHMS597064 60V, P-CHANNEL
5
TECHNOLOGY
Low-Ohmic TO-254AA
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
|
| File Size |
178.54K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Lite-On Technology Corp...
|
| Part No. |
HSDL-3000-007
|
| OCR Text |
...ommended value r1 2.2 ? 5%, 0.25 watt, for 2.7 v cc 3.3 v operation 2.7 ? 5%, 0.25 watt, for 3.0 v cc 3.6 v operation ...017 is marked with a number 0 and ywwll on the shield where y indicates the units manufacturing y... |
| Description |
IrDA? Data Compliant 115.2 kbps Infrared Transceiver
|
| File Size |
169.07K /
14 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
IXGH32N60BU1
|
| OCR Text |
... 600 20 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A A W C C C C Nm/lb.in. g
TO-247 AD
...017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH32N... |
| Description |
HiPerFAST IGBT with Diode
|
| File Size |
136.66K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
IXGK50N60AU1
|
| OCR Text |
...600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-264 AA
G
C
E C = Collector, TAB = ...017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGK 50N60AU1
Fi... |
| Description |
HiPerFAST IGBT with Diode
|
| File Size |
149.01K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
