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For 100 s Found Datasheets File :: 329655    Search Time::2.594ms    
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    2SB1025

Hitachi Semiconductor
Part No. 2sB1025
OCR Text ...E = I E = -10 A, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -150 mA VCE = -5 V, I C = -500 mA (Pulse test) V V MHz pF I C = -500 mA...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial

File Size 32.26K  /  6 Page

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    2SB1026

HITACHI[Hitachi Semiconductor]
Part No. 2sB1026
OCR Text ...* Tj Tstg 2 1 Ratings -120 -100 -5 -1 -2 1 150 -55 to +150 Unit V V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on t...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial

File Size 24.16K  /  5 Page

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    2SB1027

HITACHI[Hitachi Semiconductor]
Part No. 2sB1027
OCR Text ...FE1 as follows. EH 60 to 120 EJ 100 to 200 EK 160 to 320 2 2sB1027 Typical Output Characteristics Maximum Collector Dissipation Curve...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Transistor
silicon PNP Epitaxial

File Size 29.73K  /  6 Page

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    2SB1028

HITACHI[Hitachi Semiconductor]
Part No. 2sB1028
OCR Text ...FE1 as follows. EL 60 to 120 EM 100 to 200 2 2sB1028 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on t...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial

File Size 30.14K  /  6 Page

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    2SB1030 2SB1030A

PANASONIC[Panasonic Semiconductor]
Part No. 2sB1030 2sB1030A
OCR Text ... 2sB1030, 2sB1030A IC -- VCE -100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 Collector power dissipation PC (mW) -30 -10 -3 -1 Ta=-25C 25C 75C 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 1...
Description silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 37.06K  /  2 Page

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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2sB1032 2sB1032K
OCR Text ... -- -- -- -- 0.8 4.0 Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 3.0 -- -- V V V V V s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -200 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -5 A*1 I C = -5 A, ...
Description silicon PNP Triple Diffused

File Size 35.68K  /  6 Page

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    2SB1036

PANASONIC[Panasonic Semiconductor]
Part No. 2sB1036
OCR Text ...520 - 0.6 V MHz mV min typ max -100 -1 Unit nA A V V V *h FE Rank classification R 180 ~ 360 s 260 ~ 520 hFE Rank 2.00.2 marking +0.2 0.45-0.1 15.60.5 Optimum for high-density mounting. Allowing supply with the r...
Description silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

File Size 36.41K  /  2 Page

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    2SB1048

HITACHI[Hitachi Semiconductor]
Part No. 2sB1048
OCR Text ... 1 shot Pulse 0.4 0 50 100 150 Ambient Temperature Ta (C) -10 -30 -100 -300 Collector to Emitter Voltage VCE (V) Typical Output Characteristics -1.0 PC = 1 DC Current Transfer Ratio vs. Collector Current 100,000 DC Curren...
Description silicon PNP Epitaxial/ Darlington
silicon PNP Epitaxial, Darlington

File Size 31.00K  /  6 Page

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    2SB1050

PANASONIC[Panasonic Semiconductor]
Part No. 2sB1050
OCR Text ...bsolute Maximum Ratings max -100 -100 4.10.2 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed...
Description silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 36.25K  /  2 Page

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    2SB1071 2SB1071A

PANASONIC[Panasonic Semiconductor]
Part No. 2sB1071 2sB1071A
OCR Text ... -6 IB=-80mA VCE(sat) IC -100 TC=25C IC/IB=20 Collector power dissipation PC (W) -5 Collector current IC (A) 30 -4 ...s) 10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (-IB1=IB2) VCC=-20V TC=25C safe operation area -100...
Description silicon PNP epitaxial planar type

File Size 83.97K  /  4 Page

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