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1E104 08S19 SBR60100 P1SPNC01 INTER 336K0 ECCM1 B3941
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  100-175 Datasheet PDF File

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text 100 V R DS(on) < 0.16 ID 10 A s s TYPICAL RDS(on) = 0.12 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHA...175 175 Unit V V V A A A W W/ o C V o C o C (*) Pulse width limited by safe operating area Mar...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...verse Transfer Capacitance Min. 100 --- --- 2.0 6.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.12 --- --- --- --...175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ... QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) 110 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect powe...175 UNIT V V V A A A W C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...erse Transfer Capacitance Min. -100 --- --- -2.0 1.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.10 --- --- --- ...175 C 1 10 100 -4.5V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 -VDS , Drain-to-...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...e Transfer Capacitance Min. -100 --- --- -2.0 1.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.10 --- -...175 C 10 2.0 TJ = 25 C 1.5 1.0 1 0.5 0.1 4 5 6 7 V DS = 10V 20s PULSE WID...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...erse Transfer Capacitance Min. -100 --- --- -2.0 3.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- --- --- ...175 C Single Pulse 10 10ms 100 1000 1.6 -VS D , S ourc e-to-D rain V oltage (V ) -VDS ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...e Transfer Capacitance Min. -100 --- --- -2.0 3.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- -...175 C Single Pulse 10 10ms 100 1000 1.6 -VS D , S ourc e-to-D rain V oltage (V ) -VDS ...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...erse Transfer Capacitance Min. -100 --- --- -2.0 5.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- --- --- ...175 VGS 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...e Transfer Capacitance Min. -100 --- --- -2.0 5.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- -...175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ... Specified IRF9540, RF1S9540SM -100 -100 -19 -12 -76 20 150 1 960 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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