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  100v 4a Datasheet PDF File

For 100v 4a Found Datasheets File :: 1882    Search Time::1.156ms    
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    MAX5939AESA MAX5939BESA MAX5939EESA MAX5939FESA MAX5921 MAX5921AESA MAX5921BESA MAX5921EESA MAX5921FESA MAX5939

Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MAX5939AESA MAX5939BESA MAX5939EESA MAX5939FESA MAX5921 MAX5921AESA MAX5921BESA MAX5921EESA MAX5921FESA MAX5939
OCR Text ... Pulldown Current o Withstands -100v Input Transients with No External Components o Programmable Inrush and Short-Circuit Current Limits o O...4a Time from continuous A, B versions current limit to GATE shutdown (see Overcurrent Fault Integrat...
Description -48V Hot-Swap Controllers with External Rsense and High Gate Pulldown Current -48V热插拔控制器,外RSENSE、提供较高的栅极下拉电流

File Size 309.03K  /  18 Page

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    2SK3009

ETC
Shindengen Electric Mfg.Co.Ltd
Part No. 2SK3009
OCR Text ... VDS [V] VDD = 400V 200V 300 100v VGS 15 10 200 5 100 ID = 8A 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400
Description VX-2 Series Power MOSFET(600V 8A)

File Size 345.68K  /  10 Page

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    FDS3612

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS3612
OCR Text 100v N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficien...4a, TJ = 125C VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 3.4 A 2 2.5 -6 88 94 170 4 V mV/C ...
Description 100v N-Channel PowerTrench MOSFET
100v N-Channel PowerTrench MOSFET

File Size 85.54K  /  5 Page

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    FRM9230D FRM9230H FRM9230R FN3263

INTERSIL[Intersil Corporation]
Part No. FRM9230D FRM9230H FRM9230R FN3263
OCR Text ...ncement types with ratings from 100v to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and...4a, VGD = 0 I = 4a; di/dt = 100A/s VDD = -100v, ID = 4a IGS1 = IGS2 0 VGS 20 TEST CONDITIONS VGS =...
Description 4a/ -200V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFETs
4a, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system

File Size 56.76K  /  6 Page

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    IRGPC40FD2

IRF[International Rectifier]
Part No. IRGPC40FD2
OCR Text ...GE, IC = 250A 9.2 12 -- S VCE = 100v, IC = 27A -- -- 250 A VGE = 0V, VCE = 600V -- -- 3500 VGE = 0V, VCE = 600V, T J = 150C -- 1.3 1.7 V IC ...4a 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T C , C ase Tem pe...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)

File Size 381.33K  /  8 Page

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    IRGPC40 IRGPC40F

IRF[International Rectifier]
Part No. IRGPC40 IRGPC40F
OCR Text ...GE, IC = 250A 9.2 12 -- S VCE = 100v, IC = 27A -- -- 250 A VGE = 0V, VCE = 600V -- -- 1000 VGE = 0V, VCE = 600V, T J = 150C -- -- 100 nA VGE...4a 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T C , C ase Tem pe...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

File Size 214.50K  /  6 Page

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    IRGPH40FD2

IRF[International Rectifier]
Part No. IRGPH40FD2
OCR Text ...nsconductance 5.0 11 -- S VCE = 100v, I C = 17A Zero Gate Voltage Collector Current -- -- 250 A VGE = 0V, V CE = 1200V -- -- 1000 VGE = 0V, ...4a 20 V C E , C ollec tor-to -E m itte r V o lta ge (V ) M aximum D C C ollector Current (A...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=17A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)

File Size 380.38K  /  8 Page

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    2SD1879

WINGS[Wing Shing Computer Components]
Part No. 2SD1879
OCR Text ...5.0A IC=4a,IB1=-1/2IB2=0.8A,VCC=100v LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage(open collector) Collector...
Description SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

File Size 84.40K  /  1 Page

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    FS10KMA-4A

Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Part No. FS10KMA-4a
OCR Text ...age Thermal resistance VDD = 100v, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER ...4a HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 DRAIN-SOURCE ON-S...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 43.64K  /  4 Page

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    IRFD1Z3 IRFD1Z0 IRFD1Z2 IRFD1Z1

INTERSIL[Intersil Corporation]
Part No. IRFD1Z3 IRFD1Z0 IRFD1Z2 IRFD1Z1
OCR Text 100v, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistor...4a and 0.5A, 60V and 100v * rDS(ON) = 2.4 and 3.2 * SOA is Power Dissipation Limited * Nanosecond Sw...
Description 0.4a and 0.5A/ 60V and 100v/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs
0.4a and 0.5A, 60V and 100v, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
0.4a and 0.5A 60V and 100v 2.4 and 3.2 Ohm N-Channel Power MOSFETs

File Size 57.24K  /  6 Page

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For 100v 4a Found Datasheets File :: 1882    Search Time::1.156ms    
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