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Willow Technologies Limited
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| Part No. |
TSC-100 TSC-25A TSC-75A
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| OCR Text |
... 4.8 ] 0.438 [ 11.1 ] 0.104 [ 2.6 ] t2 0.250 [ 6.3 ] 0.563 [ 14.3 ] 0.166 [ 4.2 ] t3 0.312 [ 7.9 ] 0.625 [ 15.9 ] 0.196 [ 5.0 ] willow technologies ltd. shawlands court, newchapel road, ... |
| Description |
Tubular Power Wirewound Resistors
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| File Size |
236.38K /
2 Page |
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IRF[International Rectifier]
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| Part No. |
IRHMJ8250 IRHMJ3250 IRHMJ4250 IRHMJ7250
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| OCR Text |
...es refer to the last page 26 16 104 150 1.2 20 500 26 15 5.0 -55 to 150 300 (for 5s) 8.0 (Typical)
Pre-Irradiation
Units A
W
W/C
V ...6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Cap... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
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| File Size |
327.23K /
12 Page |
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TriQuint Semiconductor,Inc.
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| Part No. |
TGF2022-06
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| OCR Text |
... 51.9 12.9 56.99 0.257 0.400 e 104.7 28.1 41.5 8.3 43.55 0.415 0.522 e 127.7 28.7 37.0 8.0 48.44 0.432 0.556 e 125.1 dbm % db w pf - effi...6mm unit phemt cell gate source source drain upc l - via = 0.0135 nh (2x) 8qlws+(07fhoo 5hihuhqfh... |
| Description |
DC - 20 GHz Discrete power pHEMT
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| File Size |
220.54K /
10 Page |
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TriQuint Semiconductor, Inc.
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| Part No. |
TGF2022-06
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| OCR Text |
... 29.6 51.9 12.9 0.4 104.5 28.1 41.5 8.3 0.525 128.9 28.7 37.0 8.0 0.562 125.7 dbm % db ...6mm unit phemt cell gate source source drain upc l - via = 0.0135 nh (2x) unit phemt cell refere... |
| Description |
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| File Size |
179.08K /
10 Page |
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it Online |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF2022-06
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| OCR Text |
...9.6 51.9 12.9 56.99 0.257 0.400 104.7
f = 18 GHz
Vd = 10V Idq = 45 mA 28.1 41.5 8.3 43.55 0.415 0.522 127.7 Vd = 12V Idq = 45 mA 28.7 37...6mm Unit pHEMT Cell
L - via = 0.0135 nH (2x)
MODEL PARAMETER
Rg Rs Rd gm Cgs Ri Cds Rds Cgd T... |
| Description |
DC - 20 GHz Discrete power pHEMT
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| File Size |
210.63K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFZ44EPBF
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| OCR Text |
... 25C, IS = 29A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 29A --- 177 266 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ... |
| Description |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
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| File Size |
143.86K /
8 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BCR2PM
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| OCR Text |
...2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER DISSIPATION
ON-STATE POWER DISSI...6mm 120 SOLDER LAND : 2mm 100 CURVES APPLY 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-... |
| Description |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
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| File Size |
47.49K /
4 Page |
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it Online |
Download Datasheet |
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