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115ma Datasheet PDF File

For 115ma Found Datasheets File :: 264 Search Time::1.016ms
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				Mimix Broadband
Part No.	PB-CMM4000-BD-0000 CMM4000-BD07 CMM4000-BD CMM4000-BD-000V
OCR Text	...ias. Bias is nominally Vd=5V, I=115ma. Additionally there are three source resistors on chip, 13, 12 and 8.5 Ohms. One of these must be bonded to ground. Typically 12 Ohms is bonded to ground to achieve performance as shown. Bonding to one ...
Description	2.0-18.0 GHz GaAs MMIC Buffer Amplifier
File Size	189.76K / 7 Page	View it Online	Download Datasheet

				Galaxy Semi-Conductor Holdings Limited
Part No.	2N7002
OCR Text	...=5.0V,ID=50mA, Tj=100 VGS=0V,ID=115ma Production specification 2N7002 MIN 60 1 2.1 2.5 100 -100 1 A 500 500 2700 0.6 0.09 80 320 1.2 1.7 1.7 2.4 0.88 20 7.5 13.5 7.5 13.5 1.5 50 25 5 20 20 ns ns pF 3.75 1.5 mA V mS TYP MAX UNIT V nA ...
Description	Small Signal MOSFET Transistor
File Size	222.96K / 4 Page	View it Online	Download Datasheet

				CENTRAL[Central Semiconductor Corp]
Part No.	CMLDM8002A CMLDM8002AJ
OCR Text	...25, RL=150 20 ns VSD VGS=0V, IS=115ma 1.3 V SOT-563 CASE - MECHANICAL OUTLINE CMLDM8002A (USA Pinout) LEAD CODE: 1) GATE Q1 2) SOURCE Q1 3) DRAIN Q2 4) GATE Q2 5) SOURCE Q2 6) DRAIN Q1 MARKING CODE: C08 CMLDM8002AJ (Japanese Pinou...
Description	SURFACE MOUNT PICOmini DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
File Size	73.77K / 2 Page	View it Online	Download Datasheet

				CENTRAL[Central Semiconductor Corp]
Part No.	CMLDM7003 CMLDM7003J
OCR Text	...=0, f=1.0MHz TBD VSD VGS=0V, IS=115ma 1.4 P E R I L IN M Y R A -65 to +150 357 50 50 40 300 1.2 350 300 150 UNITS nA nA A nA V V mmhos pF pF pF V Notes: (1) Ceramic or aluminum core PC Board with copper mounting ...
Description	SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
File Size	99.25K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] N.A.
Part No.	CMM4000 PB-CMM4000-BD CMM4000-BD
OCR Text	...ias. Bias is nominally Vd=5V, I=115ma. Additionally there are three source resistors on chip, 13, 12 and 8.5 Ohms. One of these must be bonded to ground. Typically 12 Ohms is bonded to ground to achieve performance as shown. Bonding to one ...
Description	2.0-18.0 GHz GaAs MMIC Low Noise Amplifier
File Size	174.24K / 7 Page	View it Online	Download Datasheet

				友顺科技股份有限公司 UTC[Unisonic Technologies] Diodes Incorporated
Part No.	2N7002-AE3-R 2N7002 2N7002L-AE3-R
OCR Text	... Forward Voltage VSD VGS=0V, Is=115ma (Note ) Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Is Diode Forward Current Note: Pulse Test: Pulse Width300s, Duty Cycle2.0% 20 nS 0.88 1.5 0.8 11...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	145.06K / 6 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors
Part No.	CHA3688AQDG
OCR Text	...A A3667A YYWWG Gain and NF @ 115ma (BD grounded) Main Features Broadband performance 12.5 - 30GHz 2.1dB noise figure 26dB gain 26dBm Output IP3 Low DC power consumption 24L-QFN4x4 SMD package RF ports ESD protected (see page 1...
Description	12.5-30GHz Low Noise Amplifier
File Size	469.87K / 16 Page	View it Online	Download Datasheet

				Wall Industries,Inc.
Part No.	LANEW2412RD LANEW1205R LANEW1205RD LANEW1209R LANEW1212R LANEW1212RD LANEW1215R LANEW1215RD LANEW1233R LANEW2405R LANEW2405RD LANEW2409R LANEW2412R LANEW2415R LANEW2415RD LANEW512R LANEW512RD LANEW515R LANEW515RD LANEW533R LANEW2433R LANEW4805R LANEW4805RD LANEW4815R LANEW4815RD LANEW4809R LANEW505R LANEW505RD LANEW509R LANEW
OCR Text	...A 220mA 242mA 224mA 226mA 102mA 115ma 109mA 109mA 108mA 117mA 112mA 110mA 52mA 60mA 56mA 55mA 55mA 62mA 57mA 57mA 65% 69% 71% 72% 73% 66% 71% 71% 72% 75% 79% 80% 80% 73% 78% 78% 71% 76% 80% 80% 81% 75% 78% 80% 70% 74% 78% 80% 79% 75% 77% 77...
Description	2 Watt DC/DC Converter Single and Dual Outputs 2:1 Wide Input Voltage Range
File Size	185.80K / 4 Page	View it Online	Download Datasheet

For 115ma Found Datasheets File :: 264 Search Time::1.016ms
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