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INFINEON[Infineon Technologies AG]
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| Part No. |
IPU14N03L
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| OCR Text |
...VGS =0V, Tj=125C
A 0.01 10 1 16.7 11.5 1 100 100 20.9 14.4 nA m
Gate-source leakage current
VGS =20V, VDS=0V
Drain-source on-state...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB... |
| Description |
30 A, 30 V, 0.0209 ohm, N-CHANNEL, Si, POWER, MOSFET
OptiMOS Power-Transistor Buck converter series
OptiMOS Power MOSFET, 30V, TO251, RDSon = 14.4mOhm, 30A, LL
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| File Size |
108.10K /
8 Page |
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Infineon
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| Part No. |
BSO302SN
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| OCR Text |
...v ds 0 2 4 6 8 10 12 14 16 18 20 a 24 bso 302sn i d v gs [v] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l p tot = 2 w l 10.0 drain-source on-resistance r ds(on) = f ( t j ) pa... |
| Description |
Single N-Channel SIPMOS Small-Signal ...
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| File Size |
375.37K /
8 Page |
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it Online |
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Infineon
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| Part No. |
BSO9936
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| OCR Text |
... 4.5 v, i d = 4.1 a, r g = 16 w t d(on) 33 22 33 t r rise time v dd = 15 v, v gs = 4.5 v, i d = 4.1 a, r g = 16 w n s - 22 33 turn-off delay time v dd = 15 v, v gs = 4.5 v, i d = 4.1 a, r g = 16 w t d(off) ns 22 - ... |
| Description |
Low Capacitance Transient Voltage Suppressor Diodes
Dual N-Channel SIPMOS Small-Signal Tr...
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| File Size |
79.24K /
9 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB80N06S2-07 SPP80N06S2-07 SPI80N06S2-07
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| OCR Text |
...
Values typ. 102 3400 880 215 16 37 61 36 max. -
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
VDS 2*ID *RDS(on)max, ID =80A VGS =0V, VDS =25V, f=1MHz
51 -
S
4540 pF 1100 320 24 56 91 54 ns
VDD =30V, VGS =10V, ID =80A,... |
| Description |
80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS Power-Transistor 的OptiMOS功率晶体
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| File Size |
418.58K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD08P06P SPU08P06P
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| OCR Text |
...(on)
1.5 -
3.6 335 105 65 16
420 135 95 24
S pF
VDS2*I D*RDS(on)max , ID = -6.2 A
Input capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitanc... |
| Description |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
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| File Size |
113.11K /
9 Page |
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it Online |
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Infineon Technologies
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| Part No. |
07N60S5
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| OCR Text |
... =7.3A, RG=12
ns
-
7.5 16.5 27
35
nC
Reverse Diode Inverse diode continuous forward current Inverse diode direct current,pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr
VGS =... |
| Description |
Search --To SPI07N60S5
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| File Size |
128.23K /
10 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IPD09N03L Q67042-S4110
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| OCR Text |
...15V, ID =15A
-
3 9.2 18.2 16.5 2.7
4 12.5 24.2 21.9 -
nC
VDD =15V, ID =15A, VGS =0 to 5V VDS =15V, ID =15A, VGS =0V
nC V
V(plateau) VDD =15V, ID =15A
IS
TC=25C
-
0.9 31 29
30 120 1.2 39 37
A
V ns nC... |
| Description |
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 8.9mOhm, 30A, LL
OptiMOS Buck converter series
OptiMOS Buck converter series
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| File Size |
132.41K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPI35N10 SPP35N10 SPB35N10
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| OCR Text |
...8
Ptot
100
ID
24 20 16
80
60 12 40 8 20 4 0 0
0 0
20
40
60
80
100 120 140 160 C 190
20
40
TC
3 Safe operating area
ID = f ( VDS )
4 Transient thermal impedance
ZthJC = f (tp )
paramete... |
| Description |
SIPMOS Power-Transistor
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| File Size |
477.25K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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