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    7MBR50SC060

List of Unclassifed Manufacturers
Part No. 7MBR50SC060
OCR Text ... Emitter voltage : VGE [ V ] 20000 [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 500 [ ...sec ] Temperature [ C ] IGBT Module 7MBR50SC060 70 [ Brake ] Collector current vs. Co...
Description PIM/Built-in converter with thyristor and brake (S series)600V / 50A / PIM

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    GA600GD25S

International Rectifier
Part No. GA600GD25S
OCR Text ... Fig. 12 - Reverse Bias SOA 20000 I F = 1000A Instantaneous Forward Current - I F (A) I F = 600A TJ = 125C TJ = 25C 100 16000 I F = 300A Q RR - (nC) 12000 8000 VR = 150V TJ = 125C TJ = 25C 10 0.6 0.8 1.0 1.2 ...
Description SINGLE SWITCH IGBT DUAL INT-A-PAK

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    PMBTA64

Philips Semiconductors
Part No. PMBTA64
OCR Text ...100 mA; VCE = -5 V; (see Fig.2) 20000 V V MHz handbook, full pagewidth 100000 hFE MGD836 80000 60000 40000 20000 ...sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (T...
Description PNP Darlington transistor

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    6MBI50S-120

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 6MBI50S-120
OCR Text ...llector-Emitter voltage (typ.) 20000 Dynamic Gate charge (typ.) Vcc=600V, Ic=50A, Tj= 25 C 1000 25 o VGE=0V, f= 1MHz, Tj= 25 C o...sec ] Outline Drawings, mm 107.51 4-o6.10.3 2-o5.50.3 16.02 17 930.3 15.24 15.24 15.24 15.24...
Description IGBT(1200V/50A)

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    ST1200C ST1200C14K0L ST1200C12K0L ST1200C16K0L

International Rectifier
Part No. ST1200C ST1200C14K0L ST1200C12K0L ST1200C16K0L
OCR Text ...(A) ine 28000 26000 24000 22000 20000 18000 16000 14000 S 1200C..K S T eries 12000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half S Wave On-state Current (A) ine At Any Rated Load Condition And With R ated...
Description PHASE CONTROL THYRISTORS Hockey Puk Version

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    APT35GN120B APT35GN120BG

Advanced Power Technology
Part No. APT35GN120B APT35GN120BG
OCR Text ... V CE = +15V V GE R = 2.2 G 20000 Eon2,70A 15000 Eoff,70A 10000 Eoff,70A 10-2005 Eon2,35A Eoff,17.5A Eon2,17.5A 0 5000 Eon2,35A Eon2,17.5A Rev C Eoff,35A Eoff,17.5A Eoff,35A 050-7601 50 40 30 2...
Description IGBT

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    APT35GN120L2DQ2 APT35GN120L2DQ2G

Microsemi, Corp.
Advanced Power Technology
Part No. APT35GN120L2DQ2 APT35GN120L2DQ2G
OCR Text ... V CE = +15V V GE R = 2.2 G 20000 Eon2,70A 15000 Eoff,70A 10000 Eoff,70A 10-2005 Eon2,35A Eoff,17.5A Eon2,17.5A 0 5000 Eon2,35A Eon2,17.5A Rev B Eoff,35A Eoff,17.5A Eoff,35A 050-7604 50 40 30 2...
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX&#153; [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT

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    FMC6G50US60

Fairchild Semiconductor Corporation
Part No. FMC6G50US60
OCR Text ...0US60 Rev. A3 FMC6G50US60 20000 10000 Common Emitter V CC = 300V, V GE = 15V RG = 5.9 TC = 25 TC = 125 15 Common Emitter R L = 5.9...sec] Fig 17. RBSOA Characteristics (c)2001 Fairchild Semiconductor Corporation Fig 18. Transi...
Description IGBT
Compact & Complex Module
Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 msec to 60 sec; Accuracy:0.001% Frequency

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    SMCJ16A SMCJ160A SMCJ78A SMCJ150 SMCJ48 SMCJ51 SMCJ15 SMCJ110 SMCJ120 SMCJ8.0 SMCJ33A SMCJ24A SMCJ30 SMCJ20 SMCJ40A SMCJ

Taiwan Semiconductor Co...
Taiwan Semiconductor Company, Ltd
http://
Part No. SMCJ16A SMCJ160A SMCJ78A SMCJ150 SMCJ48 SMCJ51 SMCJ15 SMCJ110 SMCJ120 SMCJ8.0 SMCJ33A SMCJ24A SMCJ30 SMCJ20 SMCJ40A SMCJ40 MSJC78 SMCJ100 SMCJ85A SMCJ36A SMCJ130A SMCJ45A SMCJ9.0 SMCJ30A SMCJ18A SMCJ120A SMCJ100A SMCJ90A SMCJ26 SMCJ22 SMCJ43A SMCJ7.0 SMCJ54 SMCJ26A SMCJ130 SMCJ10 SMCJ5.0 SMCJ16 SMCJ48A SMCJ6.0 SMCJ5.0A SMCJ12
OCR Text ...APACITANCE BIDIRECTIONAL 10000 20000 FIG.6- TYPICAL JUNCTION CAPACITANCE Tj=25 0C f=1.0MHz Vsig=50mVp-p MEASURED AT ZERO BIAS Tj=25 0C f=1.0MHz Vsig=50mVp-p MEASURED AT ZERO BIAS Cj, JUNCTION CAPACITANCE, pF 1000 10000 1000 ...
Description Surface Mount Transient Voltage Suppressor

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    APT50GN120B2 APT50GN120B2G

Advanced Power Technology
Part No. APT50GN120B2 APT50GN120B2G
OCR Text ...0V CE V = +15V GE R = 2.2 G 20000 TJ = 125C,VGE =15V TJ = 125C, VGE = 15V 15000 10000 5000 TJ = 25C,VGE =15V TJ = 25C, VGE = 15V 20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-O...
Description IGBT

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