Part Number Hot Search : 
NTE135 AD5443 DL800 TC151 DL800 BCM5823 ES5106 1N757
Product Description
Full Text Search
  250 300 Datasheet PDF File

For 250 300 Found Datasheets File :: 125503    Search Time::1.875ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    IXYS[IXYS Corporation]
Part No. IXFR200N10P
OCR Text ...S(th) IGSS IDSS VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V TJ = 150C TJ = 175C Chara...300 s, duty cycle d 2 % (c) 2005 IXYS All rights reserved DS99239(06/05) IXFR 200N10P Sym...
Description PolarTM HiPerFET Power MOSFET

File Size 554.55K  /  5 Page

View it Online

Download Datasheet





    IXYS[IXYS Corporation]
Part No. IXFR100N25
OCR Text ...0N25 VDSS ID25 RDS(on) = 250 V = 87 A = 27 m trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJ...300 2500 5 Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Iso...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247
From old datasheet system

File Size 80.35K  /  2 Page

View it Online

Download Datasheet

    HFU5N60S HFD5N60S

SemiHow Co.,Ltd.
Part No. HFU5N60S HFD5N60S
OCR Text ...old voltage v ds = v gs , i d = 250 ? 2.5 -- 4.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 2.15 a -- 2.0 2.5 ? on...300 v, i d = 4.5 a, r g = 25 ? (note 4,5) -- 11 33 ? t r turn - on rise time -- 45 90 ? t d(off) tu...
Description 600V N-Channel MOSFET

File Size 923.23K  /  8 Page

View it Online

Download Datasheet

    LSI1013LT1G

Leshan Radio Company
Part No. LSI1013LT1G
OCR Text ... (diode conduction) b i s -275 -250 225 maximum power dissipation d mw operating junction and storage temperature range t j , t stg ? 55 to ...300 m a 1.2 1.6 ds(on) v gs = ? 1.8 v, i d = ? 10 m a 1.8 2.7 forward transconductance a g fs...
Description P-Channel 1.8-V (G-S) MOSFET

File Size 264.60K  /  6 Page

View it Online

Download Datasheet

    IXYS[IXYS Corporation]
Part No. IXFN34N80
OCR Text ...25 = 34 A RDS(on) = 0.24 W trr 250 ns S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Tes...300 2500 3000 isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure ...
Description HiPerFETTM Power MOSFETs Single DieMOSFET

File Size 129.04K  /  4 Page

View it Online

Download Datasheet

    NTD4979N NTD4979NT4G

ON Semiconductor
Part No. NTD4979N NTD4979NT4G
OCR Text ...e v (br)dss v gs = 0 v, i d = 250 a 30 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss / t j 17 mv/ c zero g...300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temp...
Description 30 V, 41 A, Single N?Channel, DPAK/IPAK

File Size 119.33K  /  7 Page

View it Online

Download Datasheet

    Panasonic
Part No. MAZ4200-M
OCR Text ...average forward current i f(av) 250 ma instanious forward current i frm 250 ma total power dissipation * 1 p tot 370 mw non-repetitive rever...300 450 orange blue blue maz4036-m 3.51 3.6 3.69 maz4036-h 3.61 3.7 3.79 maz4039 3.7 3.9 4.1 maz4039...
Description Silicon planar type

File Size 91.96K  /  6 Page

View it Online

Download Datasheet

    Nexperia
Part No. BZT52-B16 BZT52-B36 BZT52-B39
OCR Text ... max unit i f forward current - 250 ma i zsm non-repetitive peak reverse current - see table 8 table 9 table 10 p zsm non-repetitive peak p...300 s; 0.02. downloaded from: http:/// nexperia bzt52-b series single zener diodes in a sod123 ...
Description Single Zener diodes in a SOD123 package

File Size 188.03K  /  11 Page

View it Online

Download Datasheet

    HFU2N60 HFD2N60

SemiHow Co.,Ltd.
Part No. HFU2N60 HFD2N60
OCR Text ...old voltage v ds = v gs , i d = 250 ? 2.5 -- 4.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 0.9 a -- 4.0 5.0 ? on ...300 v, i d = 2.0 a, r g = 25 ? (note 4,5) -- 15 30 ? t r turn - on rise time -- 40 80 ? t d(off) tu...
Description 600V N-Channel MOSFET

File Size 624.90K  /  8 Page

View it Online

Download Datasheet

    RBQ30T65AFH

ROHM
Part No. RBQ30T65AFH
OCR Text ...*i r n=10pcs 0 50 100 150 200 250 300 350 400 450 500 reverse current : i r ( m a) i r dispersion map capacitance between terminals : ct(pf) ct dispersion map peak surge forward current : i fsm (a) i fsm dispersion map reverse ...
Description High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101)

File Size 249.92K  /  8 Page

View it Online

Download Datasheet

For 250 300 Found Datasheets File :: 125503    Search Time::1.875ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 250 300

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
2.3901979923248