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				天津新技术产业园区管理委员会
Part No.	IS61DDB41M36-250M3 IS61DDB21M36-250M3 IS61DDB21M36-275M3
OCR Text	... for 72mb, 7a for 144mb, 5b for 288mb. bw 0 controls writes to dq0?dq8; bw 1 controls writes to dq9?dq17 integrated silicon solution, inc. ? 1-800-379-4774 3 rev. f 05/08/09 i ? 36 mb (1m x 36 & 2m x 18) ddr-ii (burst of 2) cio synch...
Description
File Size	576.32K / 25 Page	View it Online	Download Datasheet

				天津新技术产业园区管理委员会
Part No.	IS61QDB21M36-250M3 IS61QDB41M36-250M3
OCR Text	...64mb, 10a for 144mb, and 2a for 288mb. x18 fbga pinout (top view) 1234567891011 acq v ss /sa* sa w bw 1 k nc r sa v ss /sa* cq bnc q9 d9 sa nc k bw 0 sa nc nc q8 cnc nc d10 v ss sa sa sa v ss nc q7 d8 dnc d11 q10 v ss v ss v ss v ss v ss n...
Description
File Size	653.15K / 27 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R323682C-FCI20 K7R323682C-FCI30 K7R323682C-FC30 K7R323682C-FCI25 K7R323682C-FEC30 K7R323682C-FEC20 K7R323682C-FEC25 K7R323682C-FC250
OCR Text	...72mb, 10a for 144mb and 2a for 288mb. 2. bw 0 controls write to d0:d8, bw 1 controls write to d9:d17, bw 2 controls write to d18:d26 and bw 3 controls write to d27:d35. 1 2 3 4 5 6 7 8 9 10 11 a cq nc/sa* nc/sa* w bw 2 k bw...
Description	1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
File Size	462.59K / 20 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C89093AF-ACFB K4C89093AF-GIFB K4C89093AF-AIFB K4C89083AF-ACFB K4C89083AF-GCF6 K4C89083AF-GIF6 K4C89083AF-AIF6 K4C89083AF-ACF6 K4C89093AF-ACF5 K4C89183AF-ACFB K4C89183AF-AIFB K4C89183AF-GCFB K4C89183AF-ACF6 K4C89163AF-ACFB K4C89163AF-GIFB K4C89163AF-AIFB K4C89183AF-GIF5 K4C89083AF-AIF5 K4C89163AF-AIF6 K4C89183AF-AIF6 K4C89163AF-AIF5 K4C89093AF-AIF6 K4C89093AF-GIF5 K4C89183AF-AIF5 K4C89093AF-GCF5 K4C89183AF-ACF5 K4C89183AF-GIF6 K4C89183AF-GIFB K4C89083AF-GIF5 K4C89093AF-AIF5 K4C89163AF-ACF5 K4C89093AF-ACF6 K4C89163AF-GIF5 K4C89163AF-GIF6 K4C89163AF-GCF6
OCR Text	288mb x18 network-dram2 specification version 0.7 k4c89183af - 2 - rev. 0.7 jan. 2005 revision history version 0.0 (oct. 2002) - first release version 0.01 (nov. 2002) - changed die revision from d-die to f-die - corrected typo...
Description	288mb x18 Network-DRAM2 Specification 288mb x18网络DRAM2规范 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk JT 55C 55#22M PIN PLUG JT 8C 8#16 PIN PLUG Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes JT 55C 55#22 SKT PLUG
File Size	1,477.34K / 55 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc
Part No.	IS61DDPB22M36 IS61DDPB22M36-375M3 IS61DDPB22M36-375M3L IS61DDPB22M36-400M3 IS61DDPB22M36-400M3L IS61DDPB24M18-375M3 IS61DDPB24M18-375M3L IS61DDPB24M18-400M3 IS61DDPB24M18-400M3L
OCR Text	...densities: 7A for 144Mb, 5B for 288mb. * BW0 controls writes to DQ0-DQ8; BW1 controls writes to DQ9-DQ17 2 Integrated Silicon Solution, Inc. Rev. 00A 03/31/08 D 72 Mb (2M x 36 & 4M x 18) D DDR-IIP (Burst of 2) CIO Synchronous S...
Description	72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burst of 2) CIO Synchronous SRAMs
File Size	584.40K / 24 Page	View it Online	Download Datasheet

				Elpida Memory
Part No.	EBR51UC8ABKD-8C EBR51UC8ABKD-AD EBR51UC8ABKD-AE EBR51UC8ABKD-AEP EBR51UC8ABKD
OCR Text	...C8ABKD consists of 16 pieces of 288mb Direct Rambus DRAM (Direct RDRAM) devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits the use of conventional...
Description	512MB 32-bit Direct Rambus DRAM RIMM垄芒 Module 512MB 32-bit Direct Rambus DRAM RIMM Module 512MB 32-bit Direct Rambus DRAM RIMM?/a> Module
File Size	113.71K / 13 Page	View it Online	Download Datasheet

				Elpida Memory
Part No.	EBR25UC8ABKD-8C EBR25UC8ABKD-AD EBR25UC8ABKD-AE EBR25UC8ABKD-AEP
OCR Text	...UC8ABKD consists of 8 pieces of 288mb Direct Rambus DRAM (Direct RDRAM) devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits the use of conventional...
Description	256MB 32-bit Direct Rambus DRAM RIMM?/a> Module 256MB 32-bit Direct Rambus DRAM RIMM Module 256MB 32-bit Direct Rambus DRAM RIMM垄芒 Module
File Size	112.67K / 13 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-FC16
OCR Text	...2mb, 10a for 144mb and 2a fo r 288mb. 2. bw 0 controls write to d0:d8, bw 1 controls write to d9:d17, bw 2 controls write to d18:d26 and bw 3 controls write to d27:d35. 1 2 3 4 5 6 7 8 9 10 11 a cq v ss /sa* nc/sa* w...
Description	1Mx36 & 2Mx18 QDRTM II b4 SRAM
File Size	197.54K / 18 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7J323682C K7J321882C
OCR Text	... 72mb, 10a for 144mb and 2a for 288mb. 2. bw 0 controls write to d0:d8, bw 1 controls write to d9:d17, bw 2 controls write to d18:d26 and bw 3 controls write to d27:d35. 1 2 3 4 5 6 7 8 9 10 11 a cq nc / sa* nc / sa* r/w bw ...
Description	1Mx36 & 2Mx18 DDR II SIO b2 SRAM
File Size	410.17K / 18 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4R571669D
OCR Text	... datasheets) - based on the 256/288mb a-die rdram ? version 1.4 direct rdram ? k4r571669d/k4r881869d page 1 version 1.4 july 2002 overview the rdram ? device is a gene ral purpose high-perfor- mance memory device suitable for use in a...
Description	256/288mbit RDRAM(D-die)
File Size	313.24K / 20 Page	View it Online	Download Datasheet

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