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Advanced Power Electronics ...
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| Part No. |
AP2309GEN-HF-14
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| OCR Text |
...al resistance, junction-ambient 3 90 /w data and specifications subject to change without notice -55 to 150 1.38 -55 to 150 parameter drain...65m fig 1. typical output characteristics fig 2. typical output characte... |
| Description |
Simple Drive Requirement
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| File Size |
94.72K /
4 Page |
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it Online |
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SUMIDA[Sumida Corporation]
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| Part No. |
RCR-875D RCH8011 RCH-855 RCH-875 RCH-895
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| OCR Text |
...333 393 473 L (H) 1.2 1.7 2.2 2.3 2.5 2.8 3.0 3.2 3.3 3.5 3.8 3.9 4.1 4.4 4.6 4.7 5.0 5.1 5.5 5.6 5.9 6.0 6.5 6.8 7.0 7.1 7.7 8.2 9.2 10 12 ...65m 56m 53m 49m 40m 37m 26.5m 50m 60m 70m 80m 90m 110m 130m 140m 150m 180m 200m 240m 350m 360m 420m ... |
| Description |
POWER INDUCTORS
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| File Size |
170.29K /
2 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO6704L AO6704
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| OCR Text |
...
Features
VDS (V) = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65m (VGS = 10V) RDS(ON) < 75m (VGS = 4.5V) RDS(ON) < 160m (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
D
K
16 25 34
G S A
Absolute Maximum Ratings T A... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
163.16K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM100UM65D-ALN
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| OCR Text |
... = 20mA VGS = 30 V, VDS = 0V
3
Unit V A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance ... |
| Description |
Single switch with Series diode MOSFET Power Module
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| File Size |
317.82K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100UM65DAG
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| OCR Text |
...20mA VGS = 30 V, VDS = 0V
65 3
Max 400 2 78 5 400
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse T... |
| Description |
Single switch with Series diode MOSFET Power Module
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| File Size |
273.06K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM100UM65S-ALN
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| OCR Text |
...20mA VGS = 30 V, VDS = 0V
65 3
Max 400 2 78 5 400
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse T... |
| Description |
Single switch Series & parallel diodes MOSFET Power Module
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| File Size |
308.36K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100UM65SAG
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| OCR Text |
...20mA VGS = 30 V, VDS = 0V
65 3
Max 400 2 78 5 400
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse T... |
| Description |
Single switch Series & parallel diodes MOSFET Power Module
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| File Size |
275.30K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50DDAM65T3G
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| OCR Text |
...4
27 29 15 30 31 R1 32 16
3
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum rating... |
| Description |
Dual Boost chopper MOSFET Power Module
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| File Size |
289.47K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50DHM65TG
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| OCR Text |
...m
1-6
APTM50DHM65TG - Rev 3
July, 2006
Tc = 25C
APTM50DHM65TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltag... |
| Description |
Asymmetrical - Bridge MOSFET Power Module
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| File Size |
282.29K /
6 Page |
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it Online |
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Price and Availability
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