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				VISAY[Vishay Siliconix]
Part No.	IRF36 IRF-36
OCR Text	...REQ. MIN. (MHz) 320 320 320 320 300 300 300 280 250 230 210 172 140 140 131 121 110 100 94 86 80 74 68 53 45 34 20 14 9.9 7.6 6.3 6.3 6.3 6....350 340 320 306 290 275 185 175 165 155 146 137 133 126 120 113 100 100 IND. (H) 0.10 0.12 0.15 0...
Description	Inductors Epoxy Conformal Coated, Axial Leaded
File Size	113.79K / 1 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Juncti...350 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Note...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...350 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	... 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C Thermal Resistance Parameter RJC RJA Junction...350 TO P 300 B O TTO M 250 ID 3.7 A 6.4A 9 .0 A IAS tp 0.01 200 Fig 12a. Unclam...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	...ction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Devices are 100% tested to these parameters. 2 www.irf.com IRF7809A/IRF7811A SO-8 Package Outline...
Description	PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9130SMD
OCR Text	...e) A V ns TJ = 25C 4.7 300 3 8.7 8.7 mC nH (from 6mm down source lead to centre of source bond pad) Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.seme...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	20.44K / 2 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	... 20 150 1.2 1300 -25 -55 to 150 300 UNITS V V A A A V W W/oC mJ A oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . ....350 PULSE DURATION = 80s rDS(ON), DRAIN TO SOURCE 300 ON RESISTANCE () 250 200 150 100 50 0 0 -20 -4...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	... 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Juncti...350 --- VGS = 0V 110 --- pF VDS = -25V 70 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Char...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	... 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...350 110 70 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9530S IRF9530SMD
OCR Text	...e) A V ns TJ = 25C 4.7 300 3 8.7 8.7 mC nH (from 6mm down source lead to centre of source bond pad) Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.seme...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	22.38K / 2 Page	View it Online	Download Datasheet

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