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  40-50a Datasheet PDF File

For 40-50a Found Datasheets File :: 10998    Search Time::1.297ms    
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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ... Power vs. Temperature Derating 40 Maximum Safe Operation Area -1000 -300 Pch (W) I D (A) 30 -100 -30 PW DC Op er 10 0 s m 10 ms s 1 (1 sh (T s 10 Channel Dissipation Drain Current = 20 -10 -3 -1...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ... Power vs. Temperature Derating 40 -1000 Maximum Safe Operation Area Pch (W) I D (A) 30 -100 PW 10 10 0 s 1 = 10 ms m s Channel Dissipation Drain Current s 20 -10 DC Op er at ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ534

HITACHI[Hitachi Semiconductor]
Part No. 2SJ534
OCR Text ... Power vs. Temperature Derating 40 1000 Maximum Safe Operation Area Pch (W) I D (A) 300 100 30 10 3 1 0.3 DC 30 10 s PW Op er Channel Dissipation 10 = 10 Drain Current 1 ms 20 m 0 s s 10 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.11K  /  9 Page

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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text ... Power vs. Temperature Derating 40 -1000 Maximum Safe Operation Area Pch (W) I D (A) 30 -100 10 DC PW 10 = 0 s 1 10 m s Channel Dissipation Drain Current 20 -10 Op er ati ms...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text ...) Note1 Ratings -60 20 -10 -40 -10 Unit V V A A A A mJ W C C Body-drain diode reverse drain current I DR Avalenche current Avalenc...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text ...ent O 10 s s pe 40 20 ot ) (T Operation in c= 25 this area is limited by R DS(on) ra tio (1 n sh 0 50 100 150 Tc (C) 200 Case Temperature -0.2 -0.1 Ta = 25 C -0.1 -0.3 -1 -3 -10 -30 ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ... 60 Channel Dissipation 40 20 10 s 10 0 PW 1 = ms DC 10 s Op m er s( at 1s ion ho (T t) c= Operation in 25 this area is C ) limited by R DS(on) Drain Current 0 50 100 150 Tc (C) 200 Case Temperature Ta ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ... 60 Channel Dissipation 40 20 Drain Current 50 100 150 Tc (C) 200 Case Temperature Typical Output Characteristics -10 V -6 V -4 V Pulse Test -3 V 0 Ta = 25 C 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ543

HITACHI[Hitachi Semiconductor]
Part No. 2SJ543
OCR Text ...Dissipation Drain Current 40 -10 -3 -1 -0.3 10 s 10 0 PW 1 s = m 1 s DC 0 m s Op 20 Operation in this area is limited by R DS(on) (1 er sh ot) (T atio c= n 25 C ) 0 50 100 150 Tc (C) 200 Case Temperat...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.32K  /  9 Page

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    2SJ544

HITACHI[Hitachi Semiconductor]
Part No. 2SJ544
OCR Text ...Dissipation Drain Current 40 -10 DC 10 1 s 20 -1 (T atio c= n Operation in 25 this area is C ) limited by R DS(on) Op er ms s (1 s m ho t) -0.1 Ta = 25 C 0 50 100 150 Tc (C) ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.22K  /  9 Page

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For 40-50a Found Datasheets File :: 10998    Search Time::1.297ms    
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