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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0915A
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| OCR Text |
...5 5 10 IDQ=0.8A IDQ=0.64A IDQ=0.48a IDQ=0.2A 15 20 25 Pin(dBm) 30 35 Id(RF)(A) Po(dBm) Pin(dBm) Po v.s. Pin freq.=2.5GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48a IDQ=0.2A 25 30 35 Id(RF)(A) Po(dBm) Po v.s. Pin freq.=2.5GHz VD=10V 1.2 1.1 1.0 0.9 ... |
| Description |
L & S BAND GaAs FET[ SMD non - matched ]
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| File Size |
1,309.44K /
48 Page |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
ISL9N7030BLS3ST ISL9N7030BLP3
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| OCR Text |
..., VGS = 10V (Figures 7, 8) ID = 48a, VGS = 4.5V (Figure 7) SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID = 15A VGS = 4... |
| Description |
30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFETTrench Power MOSFETs
30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
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| File Size |
194.89K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL3202S
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| OCR Text |
...V
G S
RDS(on) = 0.016W ID = 48a
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate... |
| Description |
HEXFET Power MOSFET
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| File Size |
93.76K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHNA9064
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| OCR Text |
...64 BVDSS -60V RDS(on) 0.055 ID -48a
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.055ohm, Id=-48a)
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| File Size |
91.11K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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