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  49a Datasheet PDF File

For 49a Found Datasheets File :: 163    Search Time::1.687ms    
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    SIHFR9310 SIHFR9310-E3 SIHFR9310T SIHFR9310T-E3 SIHFR9310TL SIHFR9310TL-E3 SIHFR9310TR-E3 IRFU9310 SIHFU9310 SIHFU9310-E

Vishay Siliconix
Part No. SIHFR9310 SIHFR9310-E3 SIHFR9310T SIHFR9310T-E3 SIHFR9310TL SIHFR9310TL-E3 SIHFR9310TR-E3 IRFU9310 SIHFU9310 SIHFU9310-E3 IRFR9310PBF IRFR9310TR IRFR9310TRL
OCR Text ...ed Inductive Waveforms ID -0.49a -0.7A BOTTOM -1.1A TOP 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Current regulator Same type as D.U.T. 50 k 0.2 F 0.3 F VDS IRFR9310, IRFU9310, SiHFR9310, SiHFU...
Description Power MOSFET
   Power MOSFET

File Size 829.75K  /  8 Page

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    PSIPM60-12 PSIPM60_12 PSIPM60/12

Powersem GmbH
Part No. PSIPM60-12 PSIPM60_12 PSIPM60/12
OCR Text ... A = 300 A VCES = 1200 V IC25 = 49a VCE(sat) = 3.1 V VCES = 1200 V IC25 = 92 A VCE(sat) = 2.7 V Test Conditions TC = 100 C, Maximum Ratings 68 300 V4 ECO-TOPTM 1 Features (per circuit) A TVJ = 25C; t = 10 ms; sin 50 Hz ...
Description Converter - Brake - Inverter Module

File Size 722.90K  /  4 Page

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    LIRFZ44N

Leshan Radio Company
Part No. LIRFZ44N
OCR Text ...eristics 1000 2.5 ID = 49a R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 2.0 100 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 25V 20s PULSE WIDTH ...
Description 55V N-Channel Mode MOSFET

File Size 241.62K  /  8 Page

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    IRFR9310PBF IRFU9310PBF IRFR9310TR IRFR9310 IRFR9310TRL IRFR9310TRLPBF IRFR9310TRPBF IRFR9310TRRPBF

Vishay Siliconix
Part No. IRFR9310PBF IRFU9310PBF IRFR9310TR IRFR9310 IRFR9310TRL IRFR9310TRLPBF IRFR9310TRPBF IRFR9310TRRPBF
OCR Text ...ed Inductive Waveforms ID -0.49a -0.7A BOTTOM -1.1A TOP 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Current regulator Same type as D.U.T. 50 k 0.2 F 0.3 F VDS IRFR9310, IRFU9310, SiHFR9310, SiHFU...
Description Power MOSFET

File Size 828.87K  /  8 Page

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    FDMS3500

Fairchild Semiconductor
Part No. FDMS3500
OCR Text 49a, 14.5m Features Max rDS(on) = 14.5m at VGS = 10V, ID = 11.5A Max rDS(on) = 16.3m at VGS = 4.5V, ID = 10A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL Tested RoHS Compliant (R) tm ...
Description N-Channel Power Trench? MOSFET 75V, 49a, 14.5mΩ
N-Channel Power Trench㈢ MOSFET 75V, 49a, 14.5mヘ

File Size 245.61K  /  7 Page

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    FDMS8460

Fairchild Semiconductor
Part No. FDMS8460
OCR Text 49a, 2.2m Features Max rDS(on) = 2.2m at VGS = 10V, ID = 25A Max rDS(on) = 3.0m at VGS = 4.5V, ID = 21.7A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL tested RoHS Compliant (R) tm G...
Description N-Channel Power Trench? MOSFET 40V, 49a, 2.2mΩ
N-Channel Power Trench㈢ MOSFET 40V, 49a, 2.2mヘ

File Size 269.13K  /  7 Page

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    FDMS5352

Fairchild Semiconductor
Part No. FDMS5352
OCR Text 49a, 6.7m Features Max rDS(on) = 6.7m at VGS = 10V, ID = 13.6A Max rDS(on) = 8.2m at VGS = 4.5V, ID = 12.3A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL Tested RoHS Compliant (R) tm ...
Description N-Channel Power Trench? MOSFET 60V, 49a, 6.7mΩ
N-Channel Power Trench㈢ MOSFET 60V, 49a, 6.7mヘ

File Size 278.25K  /  7 Page

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    IRF1404PBF

International Rectifier
Part No. IRF1404PBF
OCR Text ...DS L DRIVER 1200 ID 49a 101A BOTTOM 121A TOP RG 20V D.U.T IAS tp + V - DD 900 A 0.01 600 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 300 0 25 Starting TJ , Junction Temperature ( ...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 191.62K  /  10 Page

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    IRFZ44NLPBF IRFZ44NSPBF

International Rectifier
Part No. IRFZ44NLPBF IRFZ44NSPBF
OCR Text ...DSS = 55V RDS(on) = 0.0175 ID = 49a S Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi...
Description HEXFET?Power MOSFET
HEXFET㈢Power MOSFET

File Size 329.42K  /  11 Page

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    FDMS8662

Fairchild Semiconductor
Part No. FDMS8662
OCR Text 49a, 2.0m Features Max rDS(on) = 2.0m at VGS = 10V, ID = 28A Max rDS(on) = 3.0m at VGS = 4.5V, ID = 24A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design RoHS Compliant (R) tm ...
Description N-Channel PowerTrench垄莽 MOSFET 30V, 49a, 2.0m楼?
N-Channel PowerTrench? MOSFET 30V, 49a, 2.0mΩ

File Size 207.18K  /  7 Page

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For 49a Found Datasheets File :: 163    Search Time::1.687ms    
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