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Vishay Semiconductors
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| Part No. |
1N4151W-V-G-08
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| OCR Text |
...everse breakdown voltage i r = 5 a (pulsed) v (br) 75 v diode capacitance v f = v r = 0 v c d 2pf reverse recovery time i f = 10 ma, i r...08-may-13 3 document number: 85721 for technical questions within your region: diodesamericas@visha... |
| Description |
SWITCHING DIODE GENPURP SOD123-E3-G
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| File Size |
84.21K /
5 Page |
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VISHAY SEMICONDUCTORS
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| Part No. |
BAV21W-V-G-08
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| OCR Text |
...ard resistance i f = 10 ma r f 5 diode capacitance v r = 0, f = 1 mhz c d 1.5 pf reverse recovery time i f = 30 ma, i r = 30 ma, i r = 3 ma, r l = 100 t rr 50 ns
bav19w-v-g, bav20w-v-g, bav21w-v-g document number 85188 rev. 1.1... |
| Description |
0.2 A, 250 V, SILICON, SIGNAL DIODE
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| File Size |
65.50K /
5 Page |
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it Online |
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Hamamatsu Photonics K.K.
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| Part No. |
S10202-08 S10202-16 S10201-04
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| OCR Text |
...ransistor drain voltage v od -0.5 - 25 v reset drain voltage v rd -0.5 - 18 v overflow drain voltage v ofd -0.5 - 18 v overflow gate voltage...08, s10202-16 4 operating conditions (tdi mode, ta=25 c) parameter symbol min. typ. max. unit ou... |
| Description |
Back-thinned TDI-CCD Operating the back-thinned CCD in TDI mode delivers high sensitivity. 回到清淡TDI发动机，防治荒漠化工作的后台薄TDI的模式在防治荒漠化公约提供高灵敏度
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| File Size |
222.37K /
11 Page |
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it Online |
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