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				HITACHI[Hitachi Semiconductor] http://
Part No.	2SB791 2SB791K
OCR Text	...ons I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -4 A1 I C = -4 A, IB = -8 mA1 I C...300 -1,000 Collector to emitter voltage VCE (V) 2 2SB791(K) Typical Output Characteristics -1...
Description	Silicon PNP Epitaxial
File Size	36.18K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB792 2SB792A 2SD814 2SA1310 2SB0792A
OCR Text	... -150 -185 -150 -185 -5 -100 -50 200 150 -55 ~ +150 emitter voltage 2SB792A Emitter to base voltage Peak collector current Collector cu...300 25C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 200 100 -1 -3 -10 -30 ...
Description	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
File Size	36.47K / 2 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2SB819
OCR Text	...entary to 2SD1051 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0...300 Ta=75C 25C 120 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 200 -25C 80...
Description	Silicon PNP epitaxial planer type(For low-frequency output amplification) 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
File Size	46.30K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB859
OCR Text	... V mA Test conditions I C = -50 mA, RBE = I E = -10 A, IC = 0 VCB = -80 V, IE = 0 VCE = -5 V, IC = -1 A2 VCE = -5 V, IC = -0.1 A2 VCE ...300 100 30 10 3 1 -0.01 -0.03 -0.1 -0.3 -1.0 -3 Collector current IC (A) TC = 75C 25 -25 -10 -3 -1.0...
Description	Silicon PNP Transistor Silicon PNP Triple Diffused
File Size	31.50K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB860
OCR Text	...tem Symbol Min -100 -4 -- -- -- 50 25 Note: 1. Pulse test Typ -- -- -- -- -- -- -- Max -- -- -100 -50 -1.0 250 350 Unit V V A A V Test condi...300 -1,000 Collector to emitter voltage VCE (V) 2 2SB860 Typical Output Characteristics -1.0 ...
Description	Silicon PNP Triple Diffused
File Size	30.36K / 5 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB873 2SB0873
OCR Text	...W C C 0.45-0.1 1.27 1.27 13.50.5 0.7-0.2 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.70...300 -25C 120 - 0.3 - 0.1 - 0.03 200 80 100 40 - 0.01 - 0.01 - 0.03 - 0.1 - 0...
Description	Silicon PNP epitaxial planer type(For low-frequency power amplification)
File Size	36.32K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB928 2SB928A 2SD1250A 2SD1250
OCR Text	...tary to 2SD1250 and 2SD1250A 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 10.00.3 1.50.1 10.5min. q q q High collector to emitte...300 - 0.8 -25C -200 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 -100 - 0.4 0 0 -2 -...
Description	Silicon PNP epitaxial planar type(For power amplification)
File Size	47.41K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB929 2SB929A 2SD1252A 2SD1252
OCR Text	50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 For power amplification Complementary to 2SD1252 and 2SD1252A s Features q q q High...300 -300 -1 3.0-0.2 +0.4 +0 Unit A A mA V Forward current transfer ratio Base to emit...
Description	Silicon PNP epitaxial planar type(For power amplification)
File Size	48.48K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB930 2SB930A 2SD1253A 2SD1253
OCR Text	50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High...300 100 30 10 3 fT -- IC VCE=-5V f=1MHz TC=25C Forward current transfer ratio hFE 1000 25C...
Description	Silicon PNP epitaxial planar type(For power amplification)
File Size	48.02K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB931 2SD1254
OCR Text	50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q 1.50.1 1.5max. 1.1max. Low collector to emitter saturation voltage...300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) ...
Description	Silicon PNP epitaxial planar type(For power switching)
File Size	56.88K / 3 Page	View it Online	Download Datasheet

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