50v 7a pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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50v 7a Datasheet PDF File

For 50v 7a Found Datasheets File :: 1399 Search Time::1.734ms
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				意法半导
Part No.	STD7NB20
OCR Text	...g t j =25 o c, i d =i ar ,v dd =50v) 100 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test...7a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v...
Description	N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
File Size	96.09K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP20N65C3 SPP20N65C309 SPI20N65C3 SPA20N65C3
OCR Text	...rgy, single pulse ID=3.5A, VDD=50v ID puls EAS EAR IAR VGS VGS Ptot 62.1 690 1 7 20 30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7a, VDD =50v Avalanche current, repetitive tAR limited by Tjmax Gate sourc...
Description	New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
File Size	611.01K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR120NTRR IRFU120NPBF
OCR Text	...V, See Fig. 6 and 13 --- VDD = 50v --- ID = 5.7a ns --- RG = 22 --- RD = 8.6, See Fig. 10 Between lead, 4.5 --- nH 6mm (0.25in.) G from package 7.5 --- and center of die contact 330 --- VGS = 0V 92 --- pF VDS = 25V 54 --- = 1.0MHz, See F...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A) (IRFR120N / IRFU120N) HEXFET Power MOSFET HEXFET® Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package 9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
File Size	145.98K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP20N65C3 SPI20N65C3 SPP20N65C307 SPA20N65C3
OCR Text	...rgy, single pulse ID=3.5A, VDD=50v ID puls EAS EAR IAR VGS VGS Ptot 62.1 690 1 7 20 30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7a, VDD =50v Avalanche current, repetitive tAR limited by Tjmax Gate sourc...
Description	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220
File Size	685.93K / 15 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	D2222
OCR Text	...1 = 7ma, i b2 = C7ma, v cc = 50v min 160 10000 3500 typ 20 2 6 1.2 max 100 100 100 20000 3 3 unit m a m a m a v v v mhz m s m s m s * h fe2 rank classification t c =25 c ta=25 c rank q p h fe2 3500 to 10000 7000 to 20000 unit: mm inte...
Description	Search --To 2SD2222
File Size	87.32K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHF7310SE
OCR Text	...covery charge 4.5 m cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially contro...7a on-state resistance 5.2 w v gs = 12v, i d = 1.15a v gs(th) gate threshold voltage 2.5 4.5 v ...
Description	N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道单事件效Rad Hard HEXFET技术晶体管)
File Size	36.02K / 4 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF15NM60N STW15NM60N
OCR Text	... (starting Tj=25C, ID=IAS, VDD= 50v) Max value 6 300 Unit A mJ 3/18 Electrical characteristics STB15NM60N - STF/I15NM60N - STP15NM6...7a 2 3 0.270 Min. 600 30 1 100 100 4 0.299 Typ. Max. Unit V V/ns A A nA V IDSS IGSS VGS(th) RDS(...
Description	N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.270楼? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
File Size	585.63K / 18 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF5851PBF
OCR Text	... TOP 10 10 1 1 1.50v 1.50v 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 1...7a I D , Drain-to-Source Current (A) 10 TJ = 25 C TJ = 150 C 1.5 1.0 1 0.5 ...
Description	HEXFET垄莽 Power MOSFET HEXFET? Power MOSFET
File Size	181.48K / 14 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	L9907ND
OCR Text	...o 18v. supply overvoltage up to 50v high positioning precision and high noise immunity due to transfer characteristics with neutral zone and...7a i out = 0.35a 1.1 0.8 1.4 1.1 v v v oso output saturation voltage source stage i out = 0.7a i...
Description	MOTOR BRIDGE FOR HEADLIGHT ADJUSTMENT
File Size	157.98K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS7UM-5
OCR Text	...ICS (TYPICAL) 10 TC = 25C VDS = 50v Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT ...7a VDS = 50v 100V 16 TC = 125C 12 200V 8 8 4 4 0 0 4 8 12 ...
Description	MITSUBISHI Nch POWER MOSFET
File Size	82.45K / 5 Page	View it Online	Download Datasheet

For 50v 7a Found Datasheets File :: 1399 Search Time::1.734ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |