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alumina Datasheet PDF File

For alumina Found Datasheets File :: 4613 Search Time::1.516ms
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				Renesas Electronics Corporation
Part No.	2SK3348
OCR Text	... duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain curr...
Description	Silicon N Channel MOS FET High Speed Switching
File Size	154.27K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MMBT2484LT1
OCR Text	...mbient Total Device Dissipation alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C...
Description	Low Noise Transistor
File Size	291.84K / 6 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers Shenzhen Luguang Electronic Technology Co., Ltd LGE Shenzhen Luguang Electr... List of Unclassifed Man...
Part No.	MBSK110S MBSK12S MBSK16S MBSK14S
OCR Text	...v rrm v 20 40 60 80 100 on alumina substrate 1.0 average rectified output current i o a 60hz sine wave, r-load, ta=25 on glass-epoxi substrate 0.8 surge(non- repetitive)forward current i fsm a 60h z sine wave, 1 c...
Description	Schottky Bridge Rectifier Schottky Bridge Rectifier
File Size	191.75K / 2 Page	View it Online	Download Datasheet

				Zowie Technology Corporation
Part No.	MMBT4401GH
OCR Text	...mbient Total Device Dissipation alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C ELECTRICAL CHARACTE...
Description	Switching Transistor NPN Silicon
File Size	105.34K / 6 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	MMBTA55
OCR Text	...mbient Total Device Dissipation alumina Substrate, (* 2) Derate above 25 Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina....
Description	Driver Transistors
File Size	39.91K / 2 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	MMBD5148 MMBD5148A MMBD5148C MMBD5148S
OCR Text	...mbient Total Device Dissipation alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C...
Description	Surface Mount Switching Diode
File Size	137.28K / 2 Page	View it Online	Download Datasheet

				Sensitron
Part No.	SHD114546 SHD11454608 SHD114546B SHD114546A
OCR Text	...010 (10.4.254) .075 (1.91) max alumina ring .410.010 (10.4.254) .550.020 (14.0.508) moly lid moly base (cathode) .060.010 ( 1.52.254 ) .020.002 (.508.051) .020.005 r (.508.127 ) moly anode .075 (1.91) max .410.010 (10.4.254) moly li...
Description	HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature
File Size	36.25K / 3 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC-ABH209
OCR Text	... lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so ...
Description	GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz
File Size	181.58K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	SBAV99WT1G SBAV99RWT1G
OCR Text	...5 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 65 to +150 c electr...
Description	Dual Series Switching Diodes
File Size	96.62K / 4 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	MMBTA92
OCR Text	...mbient Total device dissipation alumina substrate 2 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Re...
Description	High Voltage Transistors
File Size	39.19K / 2 Page	View it Online	Download Datasheet

For alumina Found Datasheets File :: 4613 Search Time::1.516ms
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