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For calculating Found Datasheets File :: 3795 Search Time::1.406ms
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				MOTOROLA[Motorola, Inc]
Part No.	MTP10N10EL ON2537
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	From old datasheet system TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS
File Size	221.09K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc] http://
Part No.	MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
File Size	221.74K / 8 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP1302 MTP1302_D ON2549 ON2548
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm From old datasheet system
File Size	163.19K / 8 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP1306 MTP1306_D ON2551 ON2550
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM From old datasheet system
File Size	168.21K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP15N06VL MTP15N06VL_D ON2553
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM From old datasheet system
File Size	215.91K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP15N06V ON2554
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM From old datasheet system
File Size	163.67K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
File Size	222.23K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTP23P06V ON2569
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system
File Size	192.44K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP2P50 MTP2P50E ON2583
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	From old datasheet system TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
File Size	230.76K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP3055VL MTP3055VL_D ON2587
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM From old datasheet system
File Size	161.53K / 8 Page	View it Online	Download Datasheet

For calculating Found Datasheets File :: 3795 Search Time::1.406ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |