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Vishay
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| Part No. |
BUF646A BUF646 BUF646_A
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| OCR Text |
...
Tcase = 25C 0.01 0.01 0.1
cesat
1
10
95 9892
V
94 9205
IB - Base Current (A)
t - Time ( ms )
Figure 9. Vcesat vs. IB
10 t s ,t f - Switching Times ( m s ) ts 1 tf 0.1 saturated switching R-load IC = 2.5A, IB1 = ... |
| Description |
Silicon NPN High Voltage Switching Transistor
From old datasheet system
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| File Size |
88.42K /
8 Page |
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it Online |
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VISHAY TELEFUNKEN
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| Part No. |
BUD7312 BUD7312-SMD
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| OCR Text |
.../IB1
Figure 5. hFE vs. IC
V cesat - Collector Emitter Saturation Voltage ( V ) 10.00 0.5 0.4 1.00 t f - Fall Time ( ms ) 0.3 0.2 0.1 0.01 0.01 0 0.10 1.00 10.00
15999
Figure 8. ts vs. -IB2/IB1
saturated switching R-load IC = 0.5A... |
| Description |
3 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-251
3 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-252
From old datasheet system
Silicon NPN High Voltage Switching Transistor
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| File Size |
125.58K /
8 Page |
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it Online |
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Infineon
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| Part No. |
IL329T
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| OCR Text |
...akage Trickle Current Leakage V cesat
CEO I CEO F
V CTR
0.9 33
1.25 165 .07
1.5
V
I F=10
mA
V % F=6.0 ImA, CE =0.5 V 0.5 500 V nA A I F=16.0 mA,C =2 mA I
I=0 mA, CE =5 V V F I =5 A, V =5 V F CE
I
1
SSR C... |
| Description |
OPTICALLY COUPLED TELECOM SWITCH
From old datasheet system
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| File Size |
27.16K /
3 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BCR533 Q62702-C2382 BCR505 Q62702-C2354
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| OCR Text |
...
0.4
0.6
V
IC
1.0 V cesat
Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration)
Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration)
10 3 mA
10 1
mA
IC
10 2
IC
10... |
| Description |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
From old datasheet system
NPN Silicon Digital Transistor (Switching circuit inverter interface circuit driver circuit)
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| File Size |
35.71K /
4 Page |
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Vishay
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| Part No. |
BUF636A
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| OCR Text |
...2
Figure 7. Ptot vs.Tcase
V cesat - Collector Emitter Saturation Voltage ( V ) 10 1A 0.6A 1 2A 3A IC = 4A
3
0.1
4
8
12
16
20
0.01 0.01
0.1
1
10
VCE - Collector Emitter Voltage ( V )
95 10513
IB ... |
| Description |
Silicon NPN High Voltage Switching Transistor
From old datasheet system
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| File Size |
85.08K /
8 Page |
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ST
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| Part No. |
STGW40NC6 STGW40NC60WD
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| OCR Text |
...-------CC R xV (T , I ) THJ - C cesat ( MAX ) C C
2. Vclamp = 480V , Tj = 150C, RG = 10, VGE= 15V
Table 2.
Symbol Rthj-case Rthj-amb
Thermal resistance
Parameter Thermal resistance junction-case Max Thermal resistance junction-am... |
| Description |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
Using the latest high voltage technology based on
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| File Size |
257.97K /
14 Page |
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it Online |
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