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For condtion Found Datasheets File :: 173 Search Time::6.36ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4H561638A-TLA2 K4H280838D-TCA0 K4H280838D-TCA2 K4H280838D-TLA2 K4H560838D-TCA2 K4H560838D-TCB0 K4H560838D-TLA2 K4H560838D-TLB0 K4H560838D-TCA0 K4H560838D-TLA0 K4H561638C-TCA0 K4H561638C-TCA2 K4H561638C-TLA2 K4H560438 K4H560838A-TCA0 K4H560838A-TCA2 K4H560838A-TCB0 K4H560838A-TLA0 K4H560838A-TLA2 K4H560838A-TLB0 K4H560838B K4H560838B-TCA0 K4H560838B-TCA2 K4H560838B-TCB0 K4H560838B-TLA0 K4H560838B-TLA2 K4H560838B-TLB0 K4H560838C-TCA0 K4H560838C-TCA2 K4H560838C-TCB0 K4H560838C-TLA0 K4H560838C-TLA2 K4H560838C-TLB0 K4H1G0438A-TCA0 K4H1G0438A-TCA2 K4H1G0438A-TCB0 K4H1G0438A-TLA0 K4H1G0438A-TLA2 K4H1G0438A-TLB0 K4H1G0438B-TCA0 K4H1G0438B-TCA2 K4H1G0438B-TCB0 K4H1G0438B-TLA0 K4H1G0438B-TLA2 K4H1G0438B-TLB0 K4H1G0438C-TCA0 K4H1G0438C-TCA2 K4H1G0438C-TCB0 K4H1G0438C-TLA0 K4H1G0438C-TLA2 K4H1G0438C-TLB0 K4H1G0438D-TCA0 K4H1G0438D-TCA2 K4H1G0438D-TCB0 K4H1G0438D-TLA0 K4H1G0438D-TLA2 K4H1G0438D-TLB0 K4H1G0438E-TCA0 K4H281638E-TCB0 K4H561638A-TLA0 K4H561638A-TLB0 K4H561638C-TCB0 K4H561638C-TLA0 K4H561638C-TLB0 K4H561638D-TCA0 K4H561638D-TCA2 K4H643238M-TLB0 KM48L16031BT-G_LZ DDRSDRAM1111 K4H1G0438E-TCA2 K4H1G0438E-TCB0 K4H1G0438E-TLA0 K4H1G0438E-T
OCR Text	... raings Table 11 : DC operating condtion Table 12 : DC specification Table 13 : AC operating condition Table 14 : AC timing parameters and specifications Table 15 : AC operating test conditions Table 16 : Input/Output capacitance Table 17 :...
Description	128Mb F-die DDR SDRAM Specification 256Mb DDR SDRAM DDR SDRAM Specification Version 1.0 128MB DDR SDRAM
File Size	666.72K / 53 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor]
Part No.	KMM5322204C2WG KMM5322204C2W
OCR Text	...AS high going, the open circuit condtion of the output is achieved by CAS high going. If CAS goes to high before RAS high going, the open circuit condition of the output is achieved by RAS high going. 13. tASCtCP min -7- Rev. 0.0 (Nov...
Description	2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V 200万32的DRAM上海药物研究所使用1Mx16，每1000刷新V
File Size	278.83K / 17 Page	View it Online	Download Datasheet

				Sharp Corporation SHARP[Sharp Electrionic Components]
Part No.	GP2S01F GP2S01
OCR Text	...lamp ( lx ) PT430F PT430 ( Test condtion ) Light source:White fluorescent lamp Sharp FLR-40 SW/M VCE = 2V, T a = 25C ( Note ) Comparison between outputs of transparent resin molded type phototransistor ( PT430 ) and visible light cut-off ty...
Description	Long Focal Distance Type Photointerrupter
File Size	57.42K / 4 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	KMM5321204C2W KMM5321204C2WG
OCR Text	...AS high going, the open circuit condtion of the output is achieved by CAS high going. If CAS goes to high before RAS high going, the open circuit condition of the output is achieved by RAS high going. 13. tASCtCP min -7- Rev. 0.0 (Nov...
Description	1Mx32 DRAM SIMM (1MX16 Base)
File Size	277.91K / 17 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	7MBP200RA060
OCR Text	...ES VCE(sat) VF ICES VCE(sat) VF condtion VCE=600V input terminal open Ic=200A -Ic=200A VCE=600V input terminal open Ic=75A -Ic=75A Min. - - - - - - Typ. - - - - - - Max. 1.0 2.8 3.0 1.0 2.8 3.3 Unit mA V V mA V V DB 7MBP200RA060 Elec...
Description	IGBT-IPM(600V/200A)
File Size	378.36K / 9 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
Part No.	GLT5640L32-6 GLT5640L32-7 GLT5640L32-8 GLT5640L32-5.5 GLT5640L32-10
OCR Text	...ed, vout=0 to 3.6v ac operating condtion (ta=0 to 70 c, 3.0v vdd 3.6v, vss=0v - note1) parameter ac input high / low level voltage input timing measurement reference level voltage input rise / fall time output timing measurement referen...
Description	CMOS Synchronous DRAM 2M x 32 SDRAM
File Size	905.80K / 49 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM5322204C2W
OCR Text	...AS high going, the open circuit condtion of the output is achieved by CAS high going. If CAS goes to high before RAS high going, the open circuit condition of the output is achieved by RAS high going. 13. tASCtCP min -7- Rev. 0.0 (Nov...
Description	2MBx32 DRAM Simm Using 1MBx16
File Size	274.94K / 17 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	6MBP75RA120
OCR Text	... of FWD Symbol ICES VCE(sat) VF condtion VCE=1200V input terminal open Ic=75A -Ic=75A Min. - - - Typ. - - - Max. 1.0 2.6 3.0 Unit mA V V 6MBP75RA120 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply...
Description	IGBT-IPM(1200V/75A)
File Size	332.97K / 7 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM5321204C2W
OCR Text	...s high going, the open circuit condtion of the output is achieved by cas high going. if cas goes to high before ras high going, the open circuit condi- tion of the output is achieved by ras high going. t asc 3 t cp min 1. 2. 3. 4. 5...
Description	1M x 32 DRAM SIMM
File Size	277.80K / 17 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	7MBP150RA120
OCR Text	...ES VCE(sat) VF ICES VCE(sat) VF condtion VCE=1200V input terminal open Ic=150A -Ic=150A VCE=1200V input terminal open Ic=50A -Ic=50A Min. - - - - - - Typ. - - - - - - Max. 1.0 2.6 3.0 1.0 2.6 3.3 Unit mA V V mA V V DB 7MBP150RA120 El...
Description	IGBT-IPM(1200V/150A)
File Size	369.78K / 8 Page	View it Online	Download Datasheet

For condtion Found Datasheets File :: 173 Search Time::6.36ms
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