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For conjugate Found Datasheets File :: 618    Search Time::13.36ms    
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    RD01MUS2B

Mitsubishi Electric Semiconductor
Part No. RD01MUS2B
OCR Text ...7 12.67 + j 6.67 zout*: complex conjugate of output impedance zout* (ohm) @pin=30mw, vds=7.2v,idq=40ma f (mhz) 527 5.93 + j 15.54 zin*: complex conjugate of intput impedance zin* (ohm) < silicon rf power mos fet ( discrete ) > rd0 1mus2b ...
Description RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W

File Size 2,685.48K  /  15 Page

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    MRF9100R3 MRF9100 MRF9100SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF9100R3 MRF9100 MRF9100SR3
OCR Text ...j1.82 1.58 - j1.52 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gai...
Description GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs

File Size 390.38K  /  12 Page

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    MRF281ZR1 MRF281 MRF281SR1

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MRF281ZR1 MRF281 MRF281SR1
OCR Text ... j10.1 12.2 - j9.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Input Matching Network Device Under Test Outp...
Description MRF281SR1, MRF281ZR1 2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 308.93K  /  8 Page

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    BAL-NRF01D3

STMicroelectronics
Part No. BAL-NRF01D3
OCR Text ...eatures 50 ? nominal input / conjugate match to nrf24le1 qfn32, nrf24ap2-1ch and nrf24ap2-8ch low insertion loss low amplitude imbalance low phase imbalance small footprint: < 1.5 mm 2 benefits very low profile: < 595 m after ref...
Description 50 ohm balun transformer for 2G45 ISM matched Nordic’s chipset: nRF24LE1 QFN32, nRF24AP2-1CH and nRF24AP2-8CH

File Size 220.93K  /  8 Page

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    MRF9045MR1

Motorola, Inc
Part No. MRF9045MR1
OCR Text ...0.09 2.03 j0.28 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. v dd = 28 v, i dq = 350 ma, p out = 45 w (pep) f...
Description The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 142.35K  /  8 Page

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    MRF21125S MRF21125 MRF21125SR3

Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
Part No. MRF21125S MRF21125 MRF21125SR3
OCR Text ...j1.90 1.48 - j2.26 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note 1: ZOL* was chosen based on tradeoffs between g...
Description RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs

File Size 378.36K  /  12 Page

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    Motorola
Part No. MRF9045
OCR Text ...0.16 2.6 + j0.10 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. ...
Description MRF9045R1, MRF9045LSR1 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

File Size 387.02K  /  12 Page

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    AVAGO TECHNOLOGIES
Part No. AMMP-5024
OCR Text ...th by application of additional conjugate, linearity, or low noise matching. 2) all tested parameters guaranteed with measurement accuracy 0.5 db for gain. 3) rfin1 = rfin2 = -5 dbm, freq = 22ghz, d f = 100mhz table 4. rf specifcations ...
Description 30kHz - 40 GHz Traveling Wave Amplifer

File Size 661.36K  /  11 Page

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    CGB240B

TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
Part No. CGB240B
OCR Text ... impedance equals approximately conjugate complex input impedance: ZIN ZGEN* ) ZIS is the impedance to be presented to the interstage output (pin 1 and pin 2) of the device. The given load impedance is optimized for output power in satu...
Description 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

File Size 279.95K  /  19 Page

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    RD01MUS1 RD01MUS1-15

Quanzhou Jinmei Electronic ...
Mitsubishi Electric Semiconductor
Part No. RD01MUS1 RD01MUS1-15
OCR Text ...4 520MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance RD01MUS1 MITSUBISHI ELECTRIC 4/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING ...
Description RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

File Size 202.71K  /  6 Page

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