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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT40T301
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| OCR Text |
...ts. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply ... |
| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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| File Size |
308.12K /
6 Page |
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it Online |
Download Datasheet
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Fairchild
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| Part No. |
G40N150D
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| OCR Text |
...ICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any compone... |
| Description |
Search --To FGL40N150D
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| File Size |
465.08K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT50J325
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| OCR Text |
...ts. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply ... |
| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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| File Size |
168.29K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT50J327
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| OCR Text |
...ts. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply ... |
| Description |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
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| File Size |
155.32K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT5J301 GT5J301_07 GT5J30107
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| OCR Text |
...ts. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply ... |
| Description |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
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| File Size |
477.50K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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