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  dv-l Datasheet PDF File

For dv-l Found Datasheets File :: 24463    Search Time::1.468ms    
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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text dv/dt Rating l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V G S RDS(on) = 0.10 ID = -19A Fifth Generation HEXFETs from International Rectifier utilize advanced p...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    MOC3041 MOC3043 MOC3042

Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MOC3041 MOC3043 MOC3042
OCR Text ...Vac Power Zero Voltage Crossing dv/dt of 2000 V/s Typical, 1000 V/s Guaranteed To order devices that are tested and marked per VDE 0884 requ...L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.2...
Description 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER

File Size 292.34K  /  6 Page

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    ESS Technology
Part No. ES2841 ES2841S
OCR Text ...[3:0]. rxer is ignored while rx_dv is deasserted. rx_er i receive error input for rmii mode. indicates that external phy transceiver has detected coding errors in receive data frame currently being transmitted to rxd[1:0]. rx_er is ignore...
Description PCI Integrated LAN V.90/V.92 Modem

File Size 51.05K  /  6 Page

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    KEC semiconductor
Part No. KHB019N20F1
OCR Text ... e ar 14 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 p d 140 50 w derate above 25 1.12 0.4 w/ maximu...l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 123 dim millimeters to-220is a a b b c c d d...
Description (KHB019N20F1 / KHB019N20P1) High Voltage MOSFETs

File Size 104.50K  /  7 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. K2611B
OCR Text ... avalanche energy (note1) 30 mj dv/dt peak diode recovery dv /dt (note3) 4.0 v/ ns p d total power dissipation(@tc=25 ) 300 w derating fact...l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc th...
Description Silicon N-Channel MOSFET

File Size 1,004.76K  /  7 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. K2611SB
OCR Text ... avalanche energy (note1) 15 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 276 w derating fact...l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc th...
Description Silicon N-Channel MOSFET

File Size 699.76K  /  7 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. K2611S
OCR Text ... avalanche energy (note1) 15 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 276 w derating fact...l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc th...
Description Silicon N-Channel MOSFET

File Size 577.06K  /  7 Page

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    TLP200G TLP200G-1 TLP200M TLP270G TLP270G-1 TLP270M TLP140G TLP140G-1 TLP140M TLPXXM TLPXXG TLPXXG-1 -TLP140G

SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. TLP200G TLP200G-1 TLP200M TLP270G TLP270G-1 TLP270M TLP140G TLP140G-1 TLP140M TLPXXM TLPXXG TLPXXG-1 -TLP140G
OCR Text ... TIP+ GND TIP- GND + 0.1 1 10 dV/dt 100 1,000 10,000 100,000 1.2 1 0.01 0.1 1 10 TIP+ GND TIP- GND + 100 dV/dt 1,000 10,000 100,000...L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R B B2 C C2 D E G L L2 L3 R V2 FOOT-PRINT D2PAK 1...
Description    TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE
Computers, Hardware Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE 三极的电信线过电压保

File Size 155.88K  /  14 Page

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    TLP3020 TLP3021 TLP3022 TLP3023 TLP3030

TOSHIBA[Toshiba Semiconductor]
Part No. TLP3020 TLP3021 TLP3022 TLP3023 TLP3030
OCR Text ...age SYMBOL VF IR CT IDRM VTM IH dv / dt dv / dt(c) TEST CONDITION IF=10mA VR=5V V=0, f=1MHz VDRM=400V ITM=100mA 3/4 Vin=120Vrms, Ta=85C (Fig.1) Vin=30Vrms, IF=15mA (Fig.1) MIN 1.0 3/4 3/4 3/4 3/4 3/4 200 3/4 TYP. 1.15 3/4 10 10 1.7 0.6 500 ...
Description TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC

File Size 182.47K  /  6 Page

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