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PC801 TFS456 2A222 1A224 RF343 25D621KJ ALD1706A SB100
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For encapsulate Found Datasheets File :: 1275    Search Time::1.515ms    
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    SCTA.B.C.D.H101K10 SCTA.B.C.D.H101K16 SCTA104K35 SCTA.B.C.D.H101K20 SCTA.B.C.D.H101K25 SCTA.B.C.D.H101K35 SCTA.B.C.D.H10

NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. SCTA.B.C.D.H101K10 SCTA.B.C.D.H101K16 SCTA104K35 SCTA.B.C.D.H101K20 SCTA.B.C.D.H101K25 SCTA.B.C.D.H101K35 SCTA.B.C.D.H101K50 SCTA.B.C.D.H101K6.3 SCTA.B.C.D.H102K10 SCTA.B.C.D.H102K16 SCTA.B.C.D.H102K20 SCTA.B.C.D.H102K25 SCTA.B.C.D.H102K35 SCTA.B.C.D.H102K50 SCTA.B.C.D.H102K6.3 SCTA.B.C.D.H103K10 SCTA.B.C.D.H103K16 SCTA.B.C.D.H103K20 SCTA.B.C.D.H103K25 SCTA.B.C.D.H103K35 SCTA.B.C.D.H103K50 SCTA.B.C.D.H103K6.3 SCTA.B.C.D.H104K10 SCTA.B.C.D.H104K16 SCTA.B.C.D.H104K20 SCTA.B.C.D.H104K25 SCTA.B.C.D.H104K35 SCTA.B.C.D.H104K50 SCTA.B.C.D.H104K6.3 SCTA.B.C.D.H152K10 SCTA.B.C.D.H152K16 SCTA.B.C.D.H152K20 SCTA.B.C.D.H152K25 SCTA.B.C.D.H152K35 SCTA.B.C.D.H152K50 SCTA.B.C.D.H152K6.3 SCTA.B.C.D.H153K10 SCTA.B.C.D.H153K16 SCTA.B.C.D.H153K20 SCTA.B.C.D.H153K25 SCTA.B.C.D.H153K35 SCTA.B.C.D.H153K50 SCTA.B.C.D.H153K6.3 SCTA.B.C.D.H154K10 SCTA.B.C.D.H154K16 SCTA.B.C.D.H154K20 SCTA.B.C.D.H154K25 SCTA.B.C.D.H154K35 SCTA.B.C.D.H154K50 SCTA.B.C.D.H154K6.3 SCTA.B.C.D.H222K10 SCTA.B.C.D.H222K16 SCTA.B.C.D.H222K20 SCTA.B.C.D.H222K25 SCTA.B.C.D.H222K35 SCTA.B.C.D.H222K50 SCTA.B.C.D.H222K6.3 SCTA.B.C.D.H223K10 SCTA.B.C.D.H223K16 SCTA.B.C.D.H223K20 SCTA.B.C.D.H223K25 SCTA.B.C.D.H223K35 SCTA.B.C.D.H223K50 SCT
OCR Text ...cuit board prior to soldering D encapsulate material satisfies the UL 94 VO flammability classification RATINGS Capacitance Range: 0.1f to 150f Tolerance: 10% Voltage Range: 6.3V to 50V PERFORMANCE SPECIFICATIONS Operating Temperatu...
Description SURFACE MOUNT TANTALUM

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    SS8550D SS8550

WEITRON[Weitron Technology]
Part No. SS8550D SS8550
OCR Text encapsulate Transistors PNP Silicon 2 BASE 1 EMITTER COLLECTOR 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Volt...
Description Plastic-encapsulate Transistors PNP Silicon

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    2SD2061 D2061

Jiangsu Changjiang Electronics Technology Co., Ltd
Part No. 2SD2061 D2061
OCR Text encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES Low saturation voltage Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO ...
Description Search --To 2SD2061
TO-220F Plastic-encapsulate Transistors

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    AV8050

Avic Technology
Part No. AV8050
OCR Text encapsulate Transistors AV8050 TRANSISTOR NPN FEATURES Power dissipation PCM : 1 WTamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJTstg: -55 to +150 TO--92...
Description TO-92 Plastic-encapsulate Transistors

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    B5819WS B5819WS-SOD-323

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Jiangsu Changjiang Electronics Technology Co., Ltd
江苏长电科技股份有限公司
Part No. B5819WS B5819WS-SOD-323
OCR Text encapsulate Diode B5819WS FEATURES Power dissipation PD: 200 mW (Tamb=25) 2.70 1.6 SCHOTTKY BARRIER DIODE SOD-323 + 1.05 Collector current 1 A IF: Collector-base voltage VR: 40 V Operating and storage junction temperature ran...
Description SCHOTTKY BARRIER DIODE

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    B5819W B5819W-SOD-123

Jiangsu Changjiang Electronics Technology Co., Ltd
Part No. B5819W B5819W-SOD-123
OCR Text encapsulate Diode B5819W FEATURES Power dissipation PD : 450 mW Tamb=25ae(c) Collector current IF : 1 A Collector-base voltage VR : 40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae Unit mm SCHOTTKY BARRIE...
Description SCHOTTKY BARRIER DIODE

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    BAS19W BAS19W-21W

Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
Part No. BAS19W BAS19W-21W
OCR Text encapsulate DIODE SOT - 32 3 BAS19W/20W/21W FEATURES SWITCHING DIODE 1.BASE 2.EMITTER 3.COLLECTOR Power dissipation PD : 200 m W Tamb=25ae(c) Collector current IF : 200 m A Collector-base voltage VR : 19W:120 V; 20W:150V ; 21W...
Description SWITCHING DIODE

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    BAS516 BAS516-SOD-523

江苏长电科技股份有限公司
Jiangsu Changjiang Electronics Technology Co., Ltd
Part No. BAS516 BAS516-SOD-523
OCR Text encapsulate Diodes BAS516 FEATURES Small surface mounting type High switching speed Switching Diodes SOD-523 + - Marking: 61 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter DC reverse voltage ...
Description Switching Diodes

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    MMBT4401LT1

Avic Technology
Part No. MMBT4401LT1
OCR Text encapsulate Transistors SOT-23 MMBT4401LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER TJ, Tstg: -55 to +150 0. 95 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions ...
Description SOT-23 Plastic-encapsulate Transistors

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    2SA1179

Jiangsu Changjiang Electronics Technology Co., Ltd
Part No. 2SA1179
OCR Text encapsulate Transistors SOT-23 FEATURES . High breakdown voltage MARKING: M 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Value -55 -50 -5 -150 200 -5...
Description TRANSISTOR (PNP)

File Size 52.78K  /  1 Page

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For encapsulate Found Datasheets File :: 1275    Search Time::1.515ms    
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