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Sanyo Electric Co.,Ltd.
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| Part No. |
2SA1437 0074
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| OCR Text |
...aller and slimer. * Adoption of fbet process. * High DC current gain : (hFE=400 to 1000). * High breakdown voltage : (VCEO100V). * Low collector-to-emitter saturation voltage : (VCE(sat)0.5V). * High VEBO : (VEBO15V). * Small Cob : (Cob=4.0... |
| Description |
PNP Epitaxial Planar Silicon Transistor for High-hFE, AF Amplifier Applications(用于高电流增益，AF放大器应用的PNP硅外延平面型晶体
From old datasheet system
PNP Epitaxial Planar Silicon Transistor High-hFE, AF Amplifier Applications
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| File Size |
76.53K /
3 Page |
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Sanyo
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| Part No. |
2SA1854 0171
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| OCR Text |
...854]
Features
* Adoption of fbet and MBIT processes. * Large allowable collector dissipation. * Low saturation voltage. * Large current capacity. * Fast switching speed. * Usage of radial taping to meet automatic mounting.
1 : Emitte... |
| Description |
PNP Epitaxial Planar Silicon Transistor 20V/5A Switching Applications
From old datasheet system
PNP Epitaxial Planar Silicon Transistors
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| File Size |
41.44K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SB1123 2SD1623
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| OCR Text |
...tures
* * * * *
Adoption of fbet, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the ap... |
| Description |
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
33.45K /
5 Page |
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it Online |
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Sanyo
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| Part No. |
2SB1201 2SD1801 0738
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| OCR Text |
...801]
Features
* Adoption of fbet, MBIT processes. * Large current capacity and wide ASO. * Low collector-to-emitter saturation voltage. * Fast switching speed. * Small and slim package making it easy to make 2SB1201/2SD1801-used sets sm... |
| Description |
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications
From old datasheet system
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
142.05K /
5 Page |
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it Online |
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Sanyo
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| Part No. |
2SD1246 2SB926
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| OCR Text |
...246]
Features
* Adoption of fbet, MBIT processes. * Low saturation voltage. * Large current capacity and wide ASO.
( ) : 2SB926
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to... |
| Description |
NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications
PNP Epitaxial Planar Silicon Transistors Large-Current Driving Applications
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
84.07K /
3 Page |
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it Online |
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Sanyo
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| Part No. |
2SK1069 0892
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| OCR Text |
....250
Features
* Adoption of fbet process. * Ultrasmall-sized package permitting 2SK1069applied sets to be made smaller and slimmer.
0.15
0.425
1 2 0.65 0.65 2.0
0.3
Specifications
Absolute Maximum Ratings at Ta = 25C
Pa... |
| Description |
N-Channel Junction Silicon FET
From old datasheet system
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| File Size |
97.45K /
3 Page |
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it Online |
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Sanyo
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| Part No. |
2SA1338 2SC3392 0049
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| OCR Text |
...ations
Features
* Adoption of fbet process. * High breakdown voltage : VCEO=(-)50V. * Large current capacitiy and high fT. * Ultrasmall-sized package permitting sets to be smallsized, slim.
Package Dimensions
unit:mm 2018B
[2SA1338/2... |
| Description |
PNP/NPN Epitaxial Planar Silicon Transistors
From old datasheet system
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| File Size |
49.39K /
5 Page |
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it Online |
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Sanyo
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| Part No. |
2SA1419 0069
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| OCR Text |
...ations
Features
* Adoption of fbet, MBIT processes. * High breakdown voltage and large current capacity. * Very small size making it easy to provide highdensity hybrid ICs.
Package Dimensions
unit:mm 2038
[2SA1419/2SC3649]
E : Emi... |
| Description |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications
From old datasheet system
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
142.18K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SA1708 0128
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| OCR Text |
...ations
Features
* Adoption of fbet, MBIT processes. * High breakdown voltage, large current capacity. * Fast switching speed.
Package Dimensions
unit:mm 2064
[2SA1708/2SC4488]
( ) : 2SA1708
E : Emitter C : Collector B : Base SA... |
| Description |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications
From old datasheet system
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
152.39K /
5 Page |
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it Online |
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Sanyo
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| Part No. |
2SA1730 0135
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| OCR Text |
...ations
Features
* Adoption of fbet , MBIT processes. * Large current capacity. * Low collector-to-emitter saturation voltage. * Fast switching speed. * Small-sized package.
Package Dimensions
unit:mm 2038
[2SA1730]
E : Emitter C :... |
| Description |
High-Speed Switching Applications High-Speed Switching Applications
From old datasheet system
PNP Epitaxial Planar Silicon Transistors
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| File Size |
96.41K /
4 Page |
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it Online |
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Price and Availability
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