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For iar Found Datasheets File :: 9796    Search Time::2.266ms    
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    2SK374309

Toshiba Semiconductor
Part No. 2SK374309
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 450 450 30 13 52 40 350 13 4.0 150 -55 to 150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avala...
Description Switching Regulator Applications

File Size 230.80K  /  6 Page

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    2SK374209

Toshiba Semiconductor
Part No. 2SK374209
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 900 900 30 5 15 45 595 5 4.5 150 -55 to 150 A W mJ A mJ C C Unit V V V 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avala...
Description Switching Regulator Applications

File Size 189.27K  /  6 Page

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    MP4411

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. MP4411
OCR Text ...t: 3.9 g (typ.) W PDT EAS iar EAR W mJ A Single pulse avalanche energy (Note 1) Avalanche current 1 device operation Repetitive avalanche energy (Note 2) 4 devices operation Channel temperature Storage temperature range Note ...
Description TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)

File Size 191.58K  /  7 Page

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    MDT10P65 MDT10P65A1Q MDT10P65A2Q MDT10P65A3P MDT10P65A3S MDT10P65SD42

Micon Design Technology Corporation
Part No. MDT10P65 MDT10P65A1Q MDT10P65A2Q MDT10P65A3P MDT10P65A3S MDT10P65SD42
OCR Text ...2Register file map : BANK 0 00h iar 01h RTCC 02h PCL 03h STATUS 04h MSR 05h PORT A 06h PORT B 07h PORT C 08h PORT D 09h PORT E 0Ah PCH 0Bh INTS 0Ch PIFB1 0Dh PIFB2 0Eh TMR1L 0Fh 10h T1STA 11h 12h 13h 14h 15h CCP1L 16h 17h CCP1CTL 18h BANK 1...
Description 8-bit micro-controller

File Size 82.67K  /  12 Page

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    2SK3403NBSP 2SK3403

Toshiba Semiconductor
Part No. 2SK3403NBSP 2SK3403
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 450 450 30 13 52 100 350 13 10 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanch...
Description Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

File Size 229.16K  /  6 Page

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    Electronic Theatre Controls, Inc.
Part No. H8/3256 H8/3257 H8/3336Y H8/537 H8/3048F H8/3040 H8/3296 H8/536R H8/3001 H8/3436 H8/328 H8/3042 H8/3294 H8/532 H8/3813 H8/3434F H8/3292 H8/326 H8/3032 H8/3217 H8/3334YF H8/3394 H8/324 H8/336 H8/3437 H8/3216 H8/3102 H8/534R H8/3337Y H8/3064 H8/323 H8/3061 H8/3041 H8/338 H8/3062 H8/3066 H8/3065 H8/3067 H8/330 H8-300 H8/3005
OCR Text ...H83 CH38 GNU-C++ Company FSF iar Mentor Graphics Renesas FSF Option COFF UBROF IEEE Comment H8/300 H8/300 H8/300 SYSROF H8/300 COFF H8/300 Compiler H8/300H Language Compiler C C C C++ GNU-C iarH8 CH38 GNU-C++ Company FS...
Description In-Circuit Emulator for Renesas H8/300 and H8/500 在电路瑞H8/300H8/500仿真
In-Circuit Emulator for Renesas H8/300 and H8/500 在电路瑞萨H8/300和H8/500仿真

File Size 654.02K  /  53 Page

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    PHP4N60E PHB4N60E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP4N60E PHB4N60E
OCR Text ...MAX. 295 UNIT mJ EAR IAS, iar Unclamped inductive load, IAS = 3.2 A; tp = 0.24 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 iar = 4.5 A; tp = 2.5 s; Tj prior to ava...
Description PowerMOS transistors Avalanche energy rated

File Size 80.06K  /  9 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3309
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 450 450 30 10 40 65 222 10 6.5 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanch...
Description Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
From old datasheet system

File Size 230.08K  /  6 Page

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    SPW20N60C2

INFINEON[Infineon Technologies AG]
Part No. SPW20N60C2
OCR Text ...0A, VDD =50V ID puls EAS EAR iar dv/dt VGS Ptot Tj , Tstg 40 690 1 20 6 20 208 -55... +150 A V/ns V W C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =20A, VDD =50V Avalanche current, repetitive tAR limited by Tjma...
Description for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 121.48K  /  11 Page

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