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  id-35a Datasheet PDF File

For id-35a Found Datasheets File :: 9868    Search Time::1.469ms    
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    2SK3023

Panasonic Semiconductor
Part No. 2SK3023
OCR Text ...rrent DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 60 20 10 20 5 10 1 150 -55 to +150 Unit V V A A mJ 1 2 0.750.1 2.30.1 4.60.1 3 1: Gate 2: Drain 3: Source U Type Package Avalanche energy capacity Allowable power ...
Description Silicon N-Channel Power F-MOS FET

File Size 23.25K  /  1 Page

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    ROHM[Rohm]
Part No. RSS075P03
OCR Text ...ramic board Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits -30 20 7.5 30 -1.6 -30 2.0 150 -55 to +150 Unit V V A A A A W C C ...3.9 6.0 1.27 (8) (1) (3) 5.0 (4) 1 ESD PROTECTION DIODE 2 BODY DIODE 1 1 2 ...
Description Switching (-30V,-7.5A)

File Size 73.08K  /  5 Page

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    HFP8N60S

SemiHow Co.,Ltd.
Part No. HFP8N60S
OCR Text ...e Tested RDS(on) typ = 0.96 ID = 7.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Curre...
Description 600V N-Channel MOSFET

File Size 868.96K  /  8 Page

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    IRF7452QPBF10

International Rectifier
Part No. IRF7452QPBF10
OCR Text ... 100V RDS(on) max 0.060 ID 4.5A Description These HEXFET(R) Power MOSFET's in SO-8 package utilize the lastest processing techn...3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA...
Description HEXFETPower MOSFET

File Size 181.65K  /  8 Page

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    IRF330 IRF330-JQR-B

Seme LAB
SEMELAB LTD
Part No. IRF330 IRF330-JQR-B
OCR Text ...less otherwise stated) VDS VGS ID ID IDM PD EAS IAR dv/dt TJ Tstg TL Drain - Source Voltage Gate - Source Voltage Continuous Drain Current ...3) Junction Temperature Range Storage Temperature Range Lead Temperature (1.6mm (0.063") from case f...
Description N-CHANNEL POWER MOSFET
5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 89.00K  /  3 Page

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    US6K1 US6K109

Rohm
Part No. US6K1 US6K109
OCR Text ...uous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD Tch Tstg 2 Limits 30 12 1.5 6 0.6 6 1.0 0.7 150 -55 to +150 Unit V V A A A A W /...3 2009.03 - Rev.B US6K1 Electrical characteristics (Ta=25C) Parameter Symbol Min. - 30 - 0....
Description 2.5V Drive Nch Nch MOSFET

File Size 183.28K  /  4 Page

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    DMN100 DMN100-7 DMN100-13

DIODES[Diodes Incorporated]
Part No. DMN100 DMN100-7 DMN100-13
OCR Text ...ntinuous Continuous Pulsed VGSS ID Pd RqJA Tj, TSTG DMN100 30 20 1.1 4.0 500 250 -55 to +150 Units V V A mW K/W C Characteristic The...3 DMN100 Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 1) Drain-Source ...
Description 1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 62.71K  /  3 Page

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    FSS140

Sanyo Semicon Device
Part No. FSS140
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions Ratings -30 20 ...3 7.5 Ratings min --30 --1 10 --2.4 typ max Unit V A A V S Marking : S140 Continued on next pa...
Description Medium Output MOSFETs
Load Switching Applications

File Size 28.44K  /  4 Page

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    IPI60R280C6 IPW60R280C6

Infineon Technologies AG
Part No. IPI60R280C6 IPW60R280C6
OCR Text ...@ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt Type / Ordering Code IPW60R280C6 IPB60R280C6 IPI60R280C6 IPP60R280...3 4 5 6 7 8 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Metal Oxide Semiconductor Field Effect Transistor

File Size 2,363.29K  /  19 Page

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    HUF76112SK8 FN4834

INTERSIL[Intersil Corporation]
Part No. HUF76112SK8 FN4834
OCR Text ...m Ratings SYMBOL VDSS VDGR VGS ID ID IDM PD TJ, TSTG TL Tpkg Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20k) (Note 1)...3 mm2) copper pad at 10 second. THERMAL SPECIFICATIONS RJA Measured using FR-4 board with 0...
Description From old datasheet system
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET

File Size 183.81K  /  12 Page

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