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				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7UM-18A
OCR Text	.............................. 2.0 ID ........................................................................................... 7A TO-220 ...7 21 150 -55 ~ +150 -55 ~ +150 2 Unit V V A A W C C g Feb.1999 Typical value MITSUBISHI Nc...
Description	HIGH-SPEED SWITCHING USE 高速开关使
File Size	39.82K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	FW133
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Mounted on a cera...7 : Drain1 8 : Drain1 SANYO : SOP8 Unit -30 20 --7 -32 1.7 2.0 150 V V A A W W C C --55 to +15...
Description	Load Switching Applications
File Size	29.45K / 4 Page	View it Online	Download Datasheet

				GTM CORPORATION
Part No.	GTT8209E
OCR Text	...E POWER MOSFET BVDSS RDS(ON) ID 20V 21m 7A The GTT8209E used advanced trench technology to provide excellent on-resistance extremel...7 5.7 30 1.2 0.01 -55 ~ +150 Value 110 Unit V V A A A W W/ : : Unit : /W Thermal Data Param...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	300.31K / 4 Page	View it Online	Download Datasheet

				GTM CORPORATION
Part No.	GSS4511
OCR Text	...BVDSS 35V N-CH RDS(ON) 25m N-CH ID 7.0A P-CH BVDSS -35V N-CH RDS(ON) 40m N-CH ID -6.1A Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0C 0.40 0.19 6.20 5.00 4.00 8C 0.90 0.25 REF. M H L J K ...
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	563.99K / 7 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFT14N80P IXFV14N80P IXFV14N80PS
OCR Text	...h) IGSS IDSS RDS(on) VGS = 0 V, ID = 250A VDS = VGS, ID = 4 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values...7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26...
Description	PolarHV HiPerFET Power MOSFET
File Size	221.82K / 5 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics
Part No.	STS7C4F30L
OCR Text	...V RDS(on) <0.022 <0.080 ID 7A 4A s TYPICAL RDS(on) (N-Channel) = 0.018 TYPICAL RDS(on) (P-Channel) = 0.070 STANDARD OUTLINE ...7 4.4 28 1.6 2 -60 to 150 150 P-CHANNEL 30 30 20 4 2.5 16 Unit V V V A A A W W C C (*) Pulse wid...
Description	N-P-CHANNEL 30V- 0.018 OHM- 7A - 4A(P-CH) SO-8 STRIPFET POWER MOSFET
File Size	127.30K / 10 Page	View it Online	Download Datasheet

				Elpida Memory
Part No.	EBD11ED8ABFB-6B EBD11ED8ABFB-7B EBD11ED8ABFB-7A
OCR Text	...4 to 65 Manufacturer's JEDEC ID code Continuation code Preliminary Data Sheet E0295E20 (Ver. 2.0) 6 EBD11ED8ABFB Byte No....7 A B (Space) Initial (Space) Year code (HEX) Week code (HEX) 87 88 to 90 91 92 93 94 95 to 98...
Description	1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words ?72 bits, 2 Banks)
File Size	227.74K / 19 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	FL14KM-8A
OCR Text	........................... 0.55 G ID ......................................................................................... 14A GAT...7 5 tw = 10s 100s 1ms 10ms 100ms POWER DISSIPATION PD (W) 40 DRAIN CURRENT ID (A) 3 2 ...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 14A I(D) \| TO-220FN 晶体管\| MOSFET的\| N沟道\| 400V五（巴西）直\|14A条（丁）\|20FN
File Size	58.88K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VNB14NV04 VNB14NV0413TR VNP14NV04 VND14NV04 VND14NV04-1 VND14NV0413TR VNS14NV04
OCR Text	...ING Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot EMAX Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current M...7 65 () Value TO-220 1.7 62 IPAK 1.7 102 D2PAK 1.7 52 () Unit C/W C/W C/W mounted o...
Description	“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
File Size	508.06K / 29 Page	View it Online	Download Datasheet

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