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ON Semiconductor
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| Part No. |
NCV8705MT33TCG NCV8705MT28TCG
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| OCR Text |
...oduct parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different cond... |
| Description |
500 mA, Ultra-Low Quiescent Current, IQ 13 A, Ultra-Low Noise, LDO Voltage Regulator
500 mA, Ultra-Low Quiescent Current, IQ 13 A, Ultra-Low Noise, LDO Voltage Regulator
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| File Size |
1,745.24K /
22 Page |
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AD
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| Part No. |
ADXL50
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| OCR Text |
... the angle between the true and indicated axis of sensitivity, (see Figure 2). Transverse sensitivity is measured with an applied acceleration that is 90 from the indicated axis of sensitivity. Transverse sensitivity is specified as the per... |
| Description |
Monolithic Accelerometer With Signal Conditioning
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| File Size |
192.31K /
16 Page |
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SAMES[Sames]
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| Part No. |
PM9105AFE PM9105AFA
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| OCR Text |
...ny other conditions above those indicated in the operation sections of this specification, is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
2/10
sames
PM9105AF ELECTRICAL CHARAC... |
| Description |
THREE PHASE POWER/ENERGY METERING MODULE PULSE OUTPUT
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| File Size |
103.18K /
10 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
PTF080451E PTF080451
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| OCR Text |
...at TCASE = 25C unless otherwise indicated
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, P OUT = 22.5 W, f = 959.8 MHz
Characteristic
Error Ve... |
| Description |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
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| File Size |
154.66K /
9 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72PHB-6 B99032
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| OCR Text |
...activates a row in an idle bank indicated by BA. Read(READ) [/RAS =H,/CAS =L, /WE =H] READ command starts burst read from the active bank indicated by BA.First output data appears after /CAS latency. When A10 =H at this command,the bank is ... |
| Description |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
From old datasheet system
1 /207 /959 /552-BIT ( 16 /777 /216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
570.48K /
40 Page |
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it Online |
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Price and Availability
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