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http:// Intel, Corp. PROM Intel Corp. Intel Corporation
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Part No. |
E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002BX-B120 E28F002BX-T120 E28F002BX-B60 28F200BX-TB E28F200BX-B80 TB28F200BX-B80 TE28F002BX-B80 TE28F200BX-B80 PA28F200BX-B80 E28F200BX-B60 E28F200BX-T80 TE28F002BX-T80 TB28F200BX-T80 TE28F200BX-T80 PA28F200BX-T80 E28F200BX-B120 PA28F200BX-B120 PA28F200BX-B60 E28F200BX-T120 PA28F200BX-T60 E28F200BX-T60 PA28F200BX-T120
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Description |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列 ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes 28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY family 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY family 2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY family 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY family
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File Size |
575.71K /
48 Page |
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it Online |
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HAMAMATSU[Hamamatsu Corporation]
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Part No. |
G7151-16 G7150 G7150-16
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Description |
InGaAs PIN photodiode array Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
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File Size |
78.72K /
2 Page |
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it Online |
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Bourns, Inc. Nichicon, Corp.
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Part No. |
ZHMA2901 ZHMA2911
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Description |
Diode array Diode array; Case Size: 19x9 mm; Packaging: Bulk 0.1 A, 40 V, 6 ELEMENT, SILICON, SIGNAL DIODE Diode array Diode array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
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File Size |
167.02K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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