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IXYS[IXYS Corporation]
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| Part No. |
GWM120-0075P3
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| OCR Text |
...cles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability - auxiliar... |
| Description |
Three phase full bridge with Trench MOSFETs in DCB isolated high current package
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| File Size |
76.60K /
3 Page |
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it Online |
Download Datasheet
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IXYS[IXYS Corporation]
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| Part No. |
GWM160-0055P3
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| OCR Text |
...cles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability - auxiliar... |
| Description |
MOSFET Modules
Three phase full bridge with Trench MOSFETs in DCB isolated high current package
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| File Size |
66.92K /
3 Page |
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it Online |
Download Datasheet |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
GWM220-004P3
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| OCR Text |
...cles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - logic level gate control - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high cu... |
| Description |
Three phase full bridge with Trench MOSFETs in DCB isolated high current package 220 A, 40 V, 0.0035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
50.36K /
2 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
GWM70-01P2
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| OCR Text |
...cles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability - auxiliar... |
| Description |
Three phase full bridge with Trench MOSFETs in DCB isolated high current package
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| File Size |
64.50K /
2 Page |
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it Online |
Download Datasheet |
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WJCI[WJ Communication. Inc.]
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| Part No. |
MPR7040
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| OCR Text |
...rs, RFID Enabled Printers, Fork lift Readers, Portal Readers, and Mobile RFID devices.
Designed for Singapore Market* 1W Transmit Power (+30 dBm) Antenna Ports * Single Antenna Operation * Switchable to 2 Separate Antennas * 50 MMCX Coax... |
| Description |
Multi-Protocol RFID Reader Module Gen1, ISO 18000-6C (Gen2) in PCMCIA Type II Package
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| File Size |
313.45K /
4 Page |
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it Online |
Download Datasheet |
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WJCI[WJ Communication. Inc.]
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| Part No. |
MPR7050
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| OCR Text |
...rs, RFID Enabled Printers, Fork lift Readers, Portal Readers, and Mobile RFID devices.
Designed for Hong Kong Market* 1W Transmit Power (+30 dBm) Antenna Ports * Single Antenna Operation * Switchable to 2 Separate Antennas * 50 MMCX Coax... |
| Description |
Multi-Protocol RFID Reader Module Gen1, ISO 18000-6C (Gen2) in PCMCIA Type II Package
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| File Size |
275.12K /
4 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA07H0608M_06 RA07H0608M RA07H0608M-101 RA07H0608M06
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| OCR Text |
... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=7W, VDD=12.5V and Pin=30mW each stage transistor operating conditions are: Pin IDD @ T=38% VDD Pout Rth(ch-case) Stage (C/W) (A) (W) (W) (V) ... |
| Description |
RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
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| File Size |
93.26K /
8 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA07H3340M_06 RA07H3340M RA07H3340M-101 RA07H3340M06
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| OCR Text |
... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=7W, VDD=12.5V and Pin=20mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W) (A) ... |
| Description |
RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
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| File Size |
92.03K /
8 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA07M0608M-101 RA07M0608M
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| OCR Text |
... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=7W, VDD=7.2V and Pin=30mW each stage transistor operating conditions are: Pin IDD @ T=45% VDD Pout Rth(ch-case) Stage (C/W) (A) (W) (W) (V) s... |
| Description |
RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
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| File Size |
95.38K /
8 Page |
View
it Online |
Download Datasheet |
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