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				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	HYM328020GD-60 HYM328020GD-50
OCR Text	...........................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage.......................................................................60 ns version Vcc-0.2 - 10 - 10 0.2 10 10 Output leakage current (DO is disabled, 0 V < Vout ...
Description	8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 8M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72 8M x 32 Bit DRAM Module (SO-DIMM) -8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
File Size	27.53K / 6 Page	View it Online	Download Datasheet

				Infineon
Part No.	HYM328000GD-60 HYM328000GD-50
OCR Text	...........................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage.......................................................................60 ns version 2.0 - 0.3 2.4 - Vcc-0.2 - 10 - 10 0.2 10 10 Output leakage current (DO is di...
Description	8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
File Size	54.21K / 10 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	HYB514175BJ-60 HYB514175BJ-55 HYB514175BJ-50 Q67100-Q2072 Q67100-Q2073 HYB514175BJ-50- Q67100-Q2100
OCR Text	...-60 version Symbol Limit Values min. max. 0.8 - 0.4 10 10 2.4 - 1.0 2.4 - - 10 - 10 - 200 190 170 mA 2, 3, 4 Unit Test Condition 1 1 1 ...60 256k x 16 EDO-DRAM DC Characteristics (cont'd) TA = 0 to 70 C; VSS = 0 V; VCC = 5 V 10 %, tT ...
Description	256k x 16 Bit EDO DRAM 5 V 50 ns 256k x 16 Bit EDO DRAM 5 V 60 ns 256k x 16 Bit EDO DRAM 5 V 55 ns 256k x 16-Bit EDO-DRAM
File Size	176.03K / 22 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	HYB3164805L-60 HYB3164805L-50 HYB3164805T-60 HYB3164805T-50 HYB3164805J-60 HYB3164805J-50 HYB3165805TL-60 HYB3164805J HYB3164805TL-50 HYB3164805TL-60 HYB3165805J-50 HYB3165805J-60 HYB3165805T-50 HYB3165805T-60 HYB3165805TL-50
OCR Text	...........................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage.......................................................................60 ns version Vcc-0.2 -2 -2 0.2 2 2 Output leakage current (DO is disabled, 0 V < Vout < Vcc ...
Description	8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
File Size	474.88K / 32 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	HYB3164405L-60 HYB3164405L-50 HYB3164405T-60 HYB3164405T-50 HYB3164405J-60 HYB3164405J-50 HYB3165405J-60 HYB3165405J-50 HYB3165405TL-60 HYB3164405J HYB3164405TL-50 HYB3164405TL-60 HYB3165405T-50 HYB3165405T-60 HYB3165405TL-50
OCR Text	...........................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage.......................................................................60 ns version Vcc-0.2 -2 -2 0.2 2 2 Output leakage current (DO is disabled, 0 V < Vout < Vcc ...
Description	16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
File Size	471.24K / 32 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	HYB3164400T-60 HYB3164400T-50 HYB3164400J-60 HYB3164400J-50 HYB3165400T-60 HYB3164400J HYB3165400J-50 HYB3165400J-60 HYB3165400T-50
OCR Text	...........................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage.......................................................................60 ns version Vcc-0.2 -2 -2 0.2 2 2 Output leakage current (DO is disabled, 0 V < Vout < Vcc ...
Description	16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
File Size	446.07K / 28 Page	View it Online	Download Datasheet

				Infineon
Part No.	HYM322000GS-60 HYM322000GS-50 HYM322000S-60 HYM322000S-50 HM322000
OCR Text	...% Parameter Symbol Limit Values min. Input high voltage Input low voltage Output high voltage (IOUT = - 5 mA) Output low voltage (IOUT = 4.2...60 (RAS, CAS, address cycling, tRC = tRC min.) Standby VCC supply current (RAS = CAS = VIH) - - -...
Description	2M x 32 Bit DRAM Module From old datasheet system 2M x 32-Bit Dynamic RAM Module (4M x 16-Bit Dynamic RAM Module)
File Size	81.79K / 10 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HYB314175BJ-60 HYB314175BJ-55 HYB314175BJ-50 HB314175 Q67100-Q2149 HYB314175BJ-50- Q67100-Q2148
OCR Text	...-60 version Symbol Limit Values min. max. 2.4 - 1.0 2.4 - 2.4 - - 10 - 10 - 125 120 105 mA 2, 3, 4 Unit Notes V V V V V V A A 1 1 1 1 1...60 3.3V 256K x 16 EDO-DRAM DC Characteristics (cont'd) Parameter Average VCC supply current durin...
Description	256k x 16 Bit EDO DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) From old datasheet system
File Size	1,305.55K / 24 Page	View it Online	Download Datasheet

				Molex Electronics Ltd.
Part No.	26-60-3090 0026603090
OCR Text	...face (mm) 3.96 mm plating min: mating (in) 200 plating min: mating (m) 5 plating min: termination (in) 200 plating m...60-3020 a-41772-0002 41772-0463 a-41772-0463 41772-0480 a-41772-0480 26-60-3021 a-41772...
Description	3.96mm (.156) Pitch KK Solid Header, Right Angle, without Peg, 9 Circuits, Tin (Sn) Plating
File Size	245.35K / 10 Page	View it Online	Download Datasheet

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