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ST Microelectronics
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| Part No. |
STGB14NC60KD
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| OCR Text |
powermesh? igbt table 1: general features lower on-voltage drop (v cesat ) off losses include tail current lower c res / c ies ratio switching losses include diode recovery energy very soft ultra fast recovery antiparallel diode ... |
| Description |
N-CHANNEL powermesh IGBT
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| File Size |
355.86K /
14 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STGB14NC60K
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| OCR Text |
powermesh? igbt general features low on-voltage drop (vcesat) low c res / c ies ratio ( no cross conduction susceptibility) short circuit withstand time 10s description using the latest high voltage technology based on a patented str... |
| Description |
N-CHANNEL IGBT
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| File Size |
441.52K /
16 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP6NB80 STP6NB80FP
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| OCR Text |
powermesh ? mosfet preliminary data n typical r ds(on) = 1.6 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? proc... |
| Description |
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP
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| File Size |
222.26K /
6 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP11NB40
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| OCR Text |
powermesh ? mosfet n typical r ds(on) = 0.48 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, stmicroelec... |
| Description |
N-CHANNEL powermesh MOSFET
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| File Size |
134.74K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW12NB60
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| OCR Text |
powermesh?ii mosfet n typical r ds (on) = 0.5 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay? process, stmicroelec... |
| Description |
N-CHANNEL MOSFET
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| File Size |
192.98K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW12NK80Z
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| OCR Text |
...s well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st ful... |
| Description |
N-CHANNEL MOSFET
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| File Size |
224.14K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW12NK90Z
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| OCR Text |
...s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st fu... |
| Description |
N-CHANNEL Power MOSFET
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| File Size |
270.58K /
14 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW26NM50
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| OCR Text |
...ain pro- cess with the companys powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the companys proprietary strip techni... |
| Description |
N-CHANNEL Power MOSFET
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| File Size |
257.51K /
8 Page |
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it Online |
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