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For puls Found Datasheets File :: 3031 Search Time::1.094ms
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				Infineon Technologies AG
Part No.	FB15R06KL4
OCR Text	... ns einschaltverlustenergie pro puls i c = i nenn , v cc = 300 v turn-on energy loss per pulse v ge = 15v, t vj = 125c, r g = 68 ohm e on - 0,6 - mws l s = 80 nh a...
Description	IGBT Module IGBT模块
File Size	192.44K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSM150GAL120DLC
OCR Text	...- s einschaltverlustenergie pro puls i c = 150a, v ce = 600v, v ge = 15v turn-on energy loss per pulse r g = 5,6 w , t vj = 125c, l s = 60nh e on - 17 - mws abschaltverlustenergie pro puls i c = 150a, v ce = 600v, v ge = 15v turn-o...
Description	IGBT Module IGBT模块
File Size	84.79K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp.
Part No.	IRF830A
OCR Text	...v ds = 50 v 3. 2 50 m s puls e t est i d , drain current [a] v gs , gate-source voltage [v] 0481216 0 1 2 3 4 @ n ote : t j = 25 o c v gs = 20 v v gs = 10 v r ds(on) , [ w ] drain-source on-resistance i d , drain curre...
Description	N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为1.5Ω，漏电流.5A 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	220.19K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BCR141F BCR141L3 BCR141T BCR141U SEMH1 BCR141 BCR141S BCR141W
OCR Text	... 0 tp tp Permissible puls Load RthJS = (tp) BCR141F 10 2 Permissible pulse Load Ptotmax/P totDC = (tp) BCR141F 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 Ptotmax /PtotDC K/W RthJS 10 2 10 1...
Description	NPN Silicon Digital Transistor
File Size	494.73K / 10 Page	View it Online	Download Datasheet

				Schurter Inc.
Part No.	CSE16
OCR Text	...ten bet?tigung beibehalten. puls: bei jeder bet?t igung wird der kontakt fr eine definierte zeit geschlossen und danach selbst?ndig wieder ge?ffnet und zwar unabh?ngig davon, wie lange bet?tigt wurde. der cse 16 wir...
Description	Operating temperature -20... 85C / connection 4-pol cable
File Size	141.78K / 5 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTA06N03J3
OCR Text	...gle pulse time (s ec) s ingle puls e maximum power dis s ipation power( w ) 0.01 0 1000 500 0.1 1 2500 1500 2000 3000 10 100 1000 s ingle puls e r = 1.8 c/ w jc t = 25 c c maximum s afe operati ng area i ,d r rrent( a ) jc tc = ...
Description	N-Channel Enhancement Mode Power MOSFET
File Size	222.26K / 7 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	BSM100GB170DLC
OCR Text	...- s einschaltverlustenergie pro puls i c = 100a, v ce = 900v, v ge = 15v turn-on energy loss per pulse r g = 15 w , t vj = 125c, l s = 60nh e on - 50 - mws abschaltverlustenergie pro puls i c = 100a, v ce = 900v, v ge = 15v turn-of...
Description	IGBT-Modules
File Size	89.76K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BCR18307
OCR Text	...02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) bcr183f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible puls load r thjs = ? ...
Description	PNP Silicon Digital Transistor
File Size	237.90K / 14 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	D2601NH
OCR Text	puls po wer diod e pulse po we r diode datenblatt / data sheet d 2601nh 1/6 seite/page kenndaten elektrische eigenschaften elektri sch e eig ens chaften / ele ctric al properti es h?chstzul ?ssige werte / ...
Description	pulse Power Diode
File Size	167.62K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	FF800R17KF6C-B2
OCR Text	...25c einschaltverlustenergiepropuls turn-onenergylossperpulse i c = 800 a, v ce = 900 v, l s = 60 nh v ge = 15 v r gon = 1,2 w e on 290 mj mj t vj = 25c t vj = 125c abschaltverlustenergiepropuls turn-offenergyloss...
Description	IGBT-Wechselrichter / IGBT-inverter
File Size	371.18K / 8 Page	View it Online	Download Datasheet

For puls Found Datasheets File :: 3031 Search Time::1.094ms
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