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Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS45LV44002B-50JA1 IS45LV44002B-50JLA1
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| OCR Text |
...r -50 unit ras access time (t rac )50ns cas access time (t cac )13ns column address access time (t aa )25 ns edo page mode cycle time (t pc )20 ns read/write cycle time (t rc )84ns product series overview part no. refresh voltage is45lv4... |
| Description |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
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| File Size |
128.84K /
20 Page |
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NEC Corp.
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| Part No. |
MC-42S8LFG64S
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| OCR Text |
...rent i cc1 /ras, /cas cycling t rac = 50 ns 648 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 568 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 8.0 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 1.6 /ras only re... |
| Description |
8 M-Word By 64-Bit Synchronous Dynamic RAM Module(同步动态RAM 模块)
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| File Size |
269.47K /
32 Page |
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it Online |
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NEC Corp.
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| Part No. |
MC-42S4LFG64S
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| OCR Text |
...rent i cc1 /ras, /cas cycling t rac = 50 ns 600 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 520 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 4.0 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 0.8 /ras only re... |
| Description |
3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
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| File Size |
269.01K /
32 Page |
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it Online |
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NEC Corp.
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| Part No. |
MC-424LFG641
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| OCR Text |
...rent i cc1 /ras, /cas cycling t rac = 60 ns 1,280 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 70 ns 1,120 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 32 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 8 /ras only r... |
| Description |
64 bits dynamic RAM modules(64 位动态RAM 模块)
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| File Size |
372.34K /
44 Page |
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it Online |
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NEC Corp.
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| Part No. |
MC-4216LFG641
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| OCR Text |
...rent i cc1 /ras, /cas cycling t rac = 50 ns 2,080 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 1,760 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 16 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 8 /ras only r... |
| Description |
3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
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| File Size |
280.94K /
32 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM416RD8AS-RBM80
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| OCR Text |
...ype 10. speed 5. density 9 9. t rac (row access time) t rac (row access time) 8. power & refresh 10 power & refresh ordering information - 4 : dram - 16 : x16 bit - 18 : x18 bit - rd : direct rambus dram - 2 : 2m - 4 : 4... |
| Description |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
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| File Size |
3,846.56K /
64 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1680BS KMM372C213CK KMM372C213CS
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| OCR Text |
... 155 ns access time from ras t rac 50 60 ns 3,4 access time from cas t cac 18 20 ns 3,4,5,11 access time from column address t aa 30 35 ns 3,10,11 cas to output in low-z t clz 5 5 ns 3,11 output buffer turn-off delay t off 5 18 5 20 ns ... |
| Description |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
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| File Size |
431.59K /
19 Page |
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it Online |
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