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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M57161L-01
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Description |
Integrated Gate Bipolar transistor (igbt) Modules: 250v HYBRID IC FOR DRIvING TRENCH-GATE igbt
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File Size |
112.05K /
6 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRG4PSH71UD
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Description |
99 A, 1200 v, n-chanNEL igbt, TO-274AA INSULATED GATE BIPOLAR transistor WITH 1200v UltraFast 4-20 kHz CoPack igbt in a TO-274AA package
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File Size |
322.70K /
10 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRG4PC60U-P
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Description |
INSULATED GATE BIPOLAR transistor UltraFast Speed igbt 600v UltraFast 8-60 kHz Discrete igbt in a TO-247AC Solder Plate package
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File Size |
119.66K /
8 Page |
View
it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRG4PC60F-P
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Description |
600v Fast 1-8 kHz Discrete igbt in a TO-247AC Solder Plate package INSULATED GATE BIPOLAR transistor Fast Speed igbt
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File Size |
116.03K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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