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Samsung Electronic
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| Part No. |
MR18R162CGMN0
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| OCR Text |
... change description 1 - add the x16 rdram product (*note, x16 is same die as x18) 6 - correct v cmos to v dd & add v spd condition 7 - ...18% 10% 9% 8% new 18.5% 15.5% 12.5% 11.5% 10.5% 10 - revise the pcb height from 1250mil interrim sol... |
| Description |
(16Mx16)*12(16)pcs RIMMModule based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet
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| File Size |
275.07K /
14 Page |
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http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4H511638C-UC K4H511638C-UCA2 K4H511638C-UCB0 K4H511638C-UCB3 K4H511638C-UCCC K4H510838C-UCA2 K4H510438C-UCB3 K4H510438C-UCA2 K4H510838C-ULB0 K4H510838C-ULB3 K4H510438C-ULA2 K4H510438C-LA2 K4H510438C-ULB0 K4H510438C-ULB3 K4H510838C-ULA2 K4H511638C-ULCC K4H510838C-ULCC K4H511638C-ULB3 K4H511638C-ULA2 K4H510438C-UCB0 K4H510838C-UCB0 K4H510838C-UCB3
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| OCR Text |
x16) * samsung electronics reserves the right to change products or specification without notice. information in this document is provide...18.0 overshoot/undershoot specification for data, strobe and m ask pins.............. ............... |
| Description |
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 14-SOIC 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-PDIP 荤的512Mb芯片DDR SDRAM内存规格
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| File Size |
360.46K /
24 Page |
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Samsung Electronic
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| Part No. |
M464S0924BT1 M464S1724BT1SDRAMSODIMM
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| OCR Text |
...esh 80h 13 primary sdram width x16 10h 14 error checking sdram width none 00h 15 minimum clock dealy for back-to-back random column address...18 sdram device attributes : cas latency 3 04h 19 sdram device attributes : cs latency 0 clk 01h 2... |
| Description |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
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| File Size |
201.18K /
26 Page |
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Samsung Electronic
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| Part No. |
K4R441869A-NM K4R441869A-MCK8 K4R441869A-NCK7
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| OCR Text |
...r increased storage/bandwidth - x16 organization for low cost applications uses rambus signaling level (rsl) for up to 800mhz operation t...18. table 1-1: a. center-bonded device (top view for normal package) 12 gnd vdd vdd gnd 11 10 dqa... |
| Description |
8M X 18 DIRECT RAMBUS DRAM, 45 ns, PBGA62
K4R271669A-N(M):Direct RDRAMData Sheet
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| File Size |
312.25K /
20 Page |
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SST
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| Part No. |
SST39LF802C
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| OCR Text |
x16) multi-purpose flash plus sst39vf801c / sst39vf802c / sst39lf801c / sst39lf802c features ? organized as 512k x16 ? single voltage read a...18 ms (typical) ? block-erase time: 18 ms (typical) ? chip-erase time: 40 ms (typical) ? word-progra... |
| Description |
(SST39LF801C / SST39LF802C) 8 Mbit (x16) Multi-Purpose Flash Plus
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| File Size |
439.14K /
38 Page |
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it Online |
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