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  -18a Datasheet PDF File

For -18a Found Datasheets File :: 2584    Search Time::1.688ms    
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    AP9918GH

Advanced Power Electronics Corp.
Part No. AP9918GH
OCR Text ...n-resistance 2 v gs =4.5v, i d =18a - - 14 m ? ? source-drain ...
Description Low on-resistance, Capable of 2.5V gate drive

File Size 213.48K  /  6 Page

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    AP9916GH AP9916GJ

Advanced Power Electronics Corp.
Part No. AP9916GH AP9916GJ
OCR Text ...na q g total gate charge 2 i d =18a - 17.5 - nc q gs gate-source charge v ds =18v - 1.2 - nc q gd gate-drain ("miller") charge v gs =5v - 7.9 - nc t d(on) turn-on delay time 2 v ds =10v - 7.3 - ns t r rise time i d =18a - 98 - ns t d(off) t...
Description Low on-resistance, Capable of 2.5V gate drive

File Size 80.91K  /  6 Page

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    SMN18T50FD

KODENSHI KOREA CORP.
Part No. SMN18T50FD
OCR Text ...,5) t d(on) v dd =250v, i d =18a, r g =25 ? - 95 - ns rise time (note 4,5) t r - 375 - turn-off delay time (note 4,5) t d(off) - 100 - fall time (note 4,5) t f - 105 - total gate charge (note 4,5) q g v ds =400v, v g...
Description SWITCHING REGULATOR APPLICATION

File Size 345.53K  /  8 Page

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    FAN5059

Fairchild Semiconductor
Part No. FAN5059
OCR Text ...0.8A to 12.5A 20MHz BW, ILOAD = 18A VOUT = 2.000V VOUT = 1.550V3 ILOAD = 0.8A to 18A, VOUT = 2.000V VOUT = 1.550V3 ILOAD = 18A, VOUT = 2.0V See Figure 3 See Figure 3 * * * * * 1.940 1.480 1.900 1.480 45 50 85 50 50 * * * 13.0 2.397 2.000 1....
Description High Performance Programmable Synchronous

File Size 191.62K  /  18 Page

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    Icemos Technology
Part No. ICE35N60W
OCR Text ...y, single pulse e as i d =18a 1100 mj avalanche current, repetitive i ar limited by t j max 18 a mosfet d v /d t ruggedness d v /d t v ds =480v, i d =35a, t j =125 o c 50 v/ns gate source voltage v...
Description N-Channel Enhancement Mode MOSFET

File Size 539.13K  /  8 Page

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    AP9971GI

Advanced Power Electronics Corp.
Part No. AP9971GI
OCR Text ...on-resistance 2 v gs =10v, i d =18a - - 36 m v gs =4.5v, i d =12a - - 50 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 17 - s i dss drain-source leakage current (t ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 117.93K  /  5 Page

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    AP9971GI-HF

Advanced Power Electronics Corp.
Part No. AP9971GI-HF
OCR Text ...on-resistance 2 v gs =10v, i d =18a - - 36 m ? v gs =4.5v, i d =12a - - 50 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 17 - s i dss drain-source leakage current v d...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 150.64K  /  5 Page

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    VNB35N07-E

STMicroelectronics
Part No. VNB35N07-E
OCR Text ...ce on resistance v in =10v i d =18a v in =5v i d =18a 0.028 0.035 w w dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds =13v i d =18a 20 25 s c oss output capacitance v ds =13v f=1mhz v in ...
Description ”OMNIFET? FULLY AUTOPROTECTED POWER MOSFET

File Size 148.48K  /  13 Page

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    AP9431GH-HF

Advanced Power Electronics Corp.
Part No. AP9431GH-HF
OCR Text ...on-resistance 2 v gs =10v, i d =18a - - 24 m ? v gs =4.5v, i d =12a - - 42 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 21 - s i dss drain-source leakage current v d...
Description Lower Gate Charge, Simple Drive Requirement

File Size 91.57K  /  4 Page

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