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E11F4H1A MAZL062D 15VXC PA1706 16245 ON0271 TDSR0760 VCT3833
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  0.0064 Datasheet PDF File

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    2SC5628

Hitachi Semiconductor
Part No. 2SC5628
OCR Text ...* Super compact package; (1.4 x 0.8 x 0.59mm) * High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "XZ-". 2SC...
Description Silicon NPN Transistor

File Size 71.16K  /  11 Page

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    Renesas
Part No. 2SC5628
OCR Text ...* Super compact package; (1.4 x 0.8 x 0.59mm) * High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "XZ-". 2SC...
Description Transistors>Amplifiers/Bipolar

File Size 92.39K  /  13 Page

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    2SC5772

Hitachi Semiconductor
Part No. 2SC5772
OCR Text ...minium ceramic board (25 x 60 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output c...
Description Silicon NPN Epitaxial UHF / VHF wide band amplifier
From old datasheet system

File Size 86.31K  /  13 Page

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    Renesas
Part No. 2SC5772
OCR Text ...minium ceramic board (25 x 60 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output c...
Description Transistors>Amplifiers/Bipolar

File Size 114.80K  /  16 Page

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    2SC5772

Hitachi Semiconductor
Part No. 2SC5772
OCR Text ...minium ceramic board (25 x 60 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output c...
Description Silicon NPN Transistor

File Size 92.84K  /  14 Page

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    2SC5791

Sanyo Semicon Device
Part No. 2SC5791
OCR Text ... unit : mm 2174A [2SC5791] 16.0 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 1 2 5.45 3 3.5 ...
Description Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

File Size 33.04K  /  4 Page

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    2SC5820

Renesas Electronics Corporation
Part No. 2SC5820
OCR Text ...VEBO IC Pc Tj Tstg Ratings 12 4.0 1.5 35 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector o...
Description
File Size 135.08K  /  14 Page

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    SANYO
Part No. 2SC5823
OCR Text ...it : mm 2045B [2SC5823] 6.5 5.0 4 High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 1 : Base 2 : Collector 3...
Description General-Purpose Transistors

File Size 42.62K  /  5 Page

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    2SC5824

Rohm CO.,LTD.
Part No. 2SC5824
OCR Text ...imensions (Units : mm) MPT3 1.0 1.5 0.4 4.0 2.5 0.5 (1) (2) 3.0 0.5 (3) 1.5 0.4 1.6 !Applications NPN Silicon epitaxial planar transistor (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) 0.4 Eac...
Description Power transistor (60V, 3A)

File Size 44.35K  /  4 Page

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    2SC5825

Rohm
Part No. 2SC5825
OCR Text ... (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2073 !External dimensions (Unit : mm) (SC-63) <SOT-428> (1) 2.3 0.9 0.75 CPT3 (2) 5.5 1.5 ...
Description Power transistor (60V/ 3A)
Power transistor (60V, 3A)

File Size 44.00K  /  4 Page

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