| |
|
 |
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
2SJ364 2SJ0364
|
| OCR Text |
0.425)
I Features
0.3+0.1 -0.0 3
0.15+0.10 -0.05
1.250.10
2.10.1 5
G Low ON-resistance G Low-noise characteristics
1
2
I Absolute Maximum Ratings (Ta = 25C)
Parameter Gate to Drain voltage Drain current Gate curr... |
| Description |
For analog switch
|
| File Size |
66.93K /
3 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
2SJ537
|
| OCR Text |
...ransfer admittance : RDS (ON) = 0.16 (typ.) : |Yfs| = 3.5 S (typ.) Unit: mm
Low leakage current : IDSS = -100 A (VDS = -50 V) Enhancement-mode : Vth = -0.8~-2.0 V (VDS = -10 V, ID = -1 mA)
Maximum Ratings (Ta = 25C)
Characteristics ... |
| Description |
Chopper Regulator, DC−DC Converter and Motor Drive Applications
|
| File Size |
245.41K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC[NEC]
NEC Corp.
|
| Part No. |
2SJ598-Z 2SJ598
|
| OCR Text |
...RDS(on)2 = 190 m MAX. (VGS = -4.0 V, ID = -6 A) * Low Ciss: Ciss = 720 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS ... |
| Description |
P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251, TO-252
SWITCHING P-CHANNEL POWER MOS FET
|
| File Size |
149.62K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC Corp.
NEC[NEC]
|
| Part No. |
2SJ599-Z 2SJ599
|
| OCR Text |
...RDS(on)2 = 111 m MAX. (VGS = -4.0 V, ID = -10 A) * Low Ciss: Ciss = 1300 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package
2SJ599-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source... |
| Description |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
| File Size |
39.39K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC Corp.
NEC[NEC]
|
| Part No. |
2SJ621 2SJ621-T2B 2SJ621-T1B
|
| OCR Text |
...ortable machine and so on.
2.8 0.2
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
3
FEATURES
* 1.8 V drive available * Low on-state resistance RDS(on)1 = 44 m MAX. (VGS = -4.5 V, ID = -2.0 A) RDS(on... |
| Description |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
| File Size |
71.11K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC, Corp.
NEC[NEC]
|
| Part No. |
2SJ624 2SJ624-T1B 2SJ624-T2B
|
| OCR Text |
...
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 -0.05
0.65-0.15
+0.1
0.16 +0.1 -0.06
2.8 0.2
3
1.5
FEATURES
* 1.8 V drive available * Low on-state resistance RDS(on)1 = 54 m MAX. (VGS = -4.5 V, ID = -2.5 A) RDS(on)2 = 71 m MAX. (... |
| Description |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
| File Size |
69.46K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
